Direct measurement of thermal circuit parameters using pulsed iv and the normalized difference unit

Baylis, Charles; Dunleavy, L.P.; Daniel, J.E.

doi:10.1109/mwsym.2004.1339211

Cited by 27 publications

(15 citation statements)

References 5 publications

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“…The measurement of the quiescent power was an average of 175 acquisitions. Use of a metric such as the normalized difference [4] unit may further improve the channel temperature estimation.…”

Section: Resultsmentioning

confidence: 99%

“…According to [5] if two separate I-V measurement points of a device overlap then at that particular value of V gs and [4]. This was chosen as the starting point for this work.…”

Section: B Initial Pulsed I-v Thermal Resistance Measurementmentioning

confidence: 99%

“…Pulsed I-V measurements have been used extensively to measure R th of transistors. The method in [4] compares two sets of pulsed I-V curves arising from two different quiescent bias points. Initially the curves are traced whilst the quiescent bias of the device under test (DUT) is set to generate a specific power dissipation which results in self-heating.…”

Section: Introductionmentioning

confidence: 99%

“…This work present results from pulsed I-V thermal resistance measurements starting with a method similar to that of [4]. A variation in the approach is made by first assessing dispersion from self-heating, impact ionization and trapping effects.…”

Section: Introductionmentioning

confidence: 99%

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Study of self-heating in GaAs pHEMTs using pulsed I-V Analysis

Schwitter

Albahrani

Parker

et al. 2013

81st ARFTG Microwave Measurement Conference

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A pulsed I-V thermal resistance R th measurement method is formulated and applied on-wafer to a GaAs MMIC pHEMT. An investigation of device dispersion phenomena assesses their impact on the measurement. It is found that performing the R th measurement using two quiescent bias points in close proximity (situated beyond the knee voltage yet prior to drain voltages that result in significant levels of gate leakage due to impact ionization) improves the accuracy of the method. Extraction of thermal coefficients characterizes the drain current reduction due to heating, allowing for an efficient calculation of R th with improved precision.

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Section: Resultsmentioning

confidence: 99%

“…According to [5] if two separate I-V measurement points of a device overlap then at that particular value of V gs and [4]. This was chosen as the starting point for this work.…”

Section: B Initial Pulsed I-v Thermal Resistance Measurementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Study of self-heating in GaAs pHEMTs using pulsed I-V Analysis

Schwitter

Albahrani

Parker

et al. 2013

81st ARFTG Microwave Measurement Conference

View full text Add to dashboard Cite

show abstract

“…As a result, for pulsed I-V curves, the channel temperature is approximately constant (independent of bias point), as it is only determined by the power dissipation at the quiescent bias point [55]. In the case of where pulsed I-V measurements are taken from a quiescent bias point of zero power dissipation (as in all of our measurements described here), the channel temperature is simply equal to the ambient temperature One can usually assume that at points of same VGS and VDS where two I-V curves share the same current value, the device has roughly the same channel temperature [57].…”

Section: A1 Experimental Measurementsmentioning

confidence: 99%

Electrical degradation mechanisms of RF power GaAs PHEMTs

Villanueva

Alamos

Hisaka³

et al.

IEEE International Electron Devices Meeting 2003

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GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability is of serious concern. Previous studies have identified several distinct degradation phenomena in these devices, but a complete picture has yet to be formed.In this study, we have carried out a comprehensive study of the mechanisms of electrical degradation on a set of experimental RF power GaAs PHEMTs (non-commercial devices provided by our sponsor, Mitsubishi Electric). A wide variety of electrical stressing experiments employing different conditions (varying temperature, bias, environment) were performed on these devices in order to monitor their degradation with stressing.Our general observations showed several forms of degradation, the most concerning being an increase in the drain resistance RD and a reduction in maximum drain current Ima. Contrary to what is often claimed in the literature, our experiments indicated that these forms of degradation were not driven by impact-ionization or hot-electron effects. Instead, we found the degradation to be strongly correlated with temperature, stressing environment, and drain-gate bias, which were all consistent with a corrosion mechanism. Via materials analysis we were able to confirm that the degradation of both RD and I,., were due to surface corrosion on the drain side of the device, albeit at different specific locations. The increase in RD was attributed to oxidation on the n+GaAs ledge, while the reduction in I, was due to oxidation on the AlGaAs surface, closer to the gate.A recoverable negative shift in the threshold voltage VT and a permanent decrease in Rs were also observed during electrical stressing. The shift in VT was attributed to field-assisted tunneling of electrons out of traps under the gate, while the decrease in Rs was found to be consistent with recombination-induced annealing of defects on the source side of the device.

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A parameter extraction method for GaN HEMT empirical large‐signal model including self‐heating and trapping effects

Wen

Wang

et al. 2015

Int J Numerical Modelling

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SUMMARYThis paper presents an analytical parameter extraction method for empirical large-signal model of GaN high electron mobility transistors (HEMTs) including self-heating and trapping effects. Every parameter in the model is extracted in an analytic way. An improved Angelov I-V model specific for GaN HEMTs with 53 parameters is employed. The I-V model parameters are divided into blocks according to their physical meaning, and different blocks are extracted separately by fitting the pulsed I-V transfer characteristic curves of the device at different quiescent bias points. The capacitance model is extracted through mathematical analysis. This method has been implemented in MATLAB (MathWorks, Natick, MA, USA) programming, and good accuracy is obtained between model predictions and experimental results.

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Direct measurement of thermal circuit parameters using pulsed iv and the normalized difference unit

Cited by 27 publications

References 5 publications

Study of self-heating in GaAs pHEMTs using pulsed I-V Analysis

Study of self-heating in GaAs pHEMTs using pulsed I-V Analysis

Electrical degradation mechanisms of RF power GaAs PHEMTs

A parameter extraction method for GaN HEMT empirical large‐signal model including self‐heating and trapping effects

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