Direct measurement of the potential spike energy in AlGaAs/GaAs single-heterojunction bipolar transistors

Lin, Hao‐Hsiung; Lee, S.-C.

doi:10.1109/edl.1985.26180

Cited by 30 publications

(8 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We attempted to determine the size of the potential spike energy at the emitter-base heterojunction from I -V transfer characteristics of the HBT. 21 However, it is difficult to determine the accurate size of the potential spike energy or its practical effect to the device characteristics since the Ohmic characteristics of the subcollector were degraded. Further improving the Ohmic characteristics would clarify the size of the potential spike energy.…”

Section: Common-emitter Current-voltage Characteristics Of a Pnp Algamentioning

confidence: 99%

Common-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer

Kumakura

Makimōto

Kobayashi

2002

Applied Physics Letters

View full text Add to dashboard Cite

We fabricated a Pnp AlGaN/GaN heterojunction bipolar transistor and investigated its common-emitter current–voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The Al mole fraction in an AlGaN emitter layer was 0.18. The thickness of the GaN base layer was 0.12 μm and its Si doping concentration was as high as 1×1019 cm−3, so its base resistance decreased two orders of magnitude compared with the reported Npn nitride heterojunction bipolar transistors. The transistor showed good saturation current–voltage characteristics and the maximum common-emitter current gain of 28 was obtained for collector current of −2×10−5 A at room temperature.

show abstract

Section: Common-emitter Current-voltage Characteristics Of a Pnp Algamentioning

confidence: 99%

Common-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer

Kumakura

Makimōto

Kobayashi

2002

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…The other is the existence of the potential spike at the emitter -base heterojunction. Unfortunately, we could not confirm the size of the potential spike energy from I-V transfer characteristics of the HBT [10] and the practical effect to the device characteristics because of the degraded ohmic characteristics for the p-type subcollector. 4 Summary In summary, we have demonstrated the high voltage operation of the Pnp AlGaN/GaN HBT with thin base of 80 nm in common -emitter configuration.…”

Section: Methodsmentioning

confidence: 68%

High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors

Kumakura

Yamauchi²,

Makimōto

2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

PACS 85.30. De, 85.30.Pq We fabricated a Pnp AlGaN/GaN heterojunction bipolar transistor and investigated its common -emitter current -voltage characteristics at room temperature. The device structures were grown by metalorganic vapor phase epitaxy on the sapphire substrates. The buffer layer was a newly developed Al 2 O 3 /AlN/AlON/ Al 2 O 3 , resulting in the dislocation density of 6 × 10 8 cm -2 in MOVPE-grown GaN layer. This relatively low dislocation density led to the high voltage operation in the devices, corresponding to the breakdown field of 2.4 MV/cm. AlGaN/(Al)GaN superlattices were applied to the emitter and subcollector to increase the hole concentrations in these layers. An n-type GaN base width was 80 nm. The sheet resistivity and the specific contact resistance were 900 Ω/square and 2.6 × 10 -5 Ω-cm 2 for a 80 nm base, respectively. The base sheet resistivity of Pnp AlGaN/GaN HBT was two orders of magnitude smaller than that of Npn AlGaN/GaN HBTs. The maximum current gain was 8 at the collector current of 11.5 mA for the 30 µm × 50 µm device. It operated at the collector current of 20 mA at the collector -emitter voltage of 65 V with a current gain of 5. The corresponding current density and power density were 1.3 kA/cm 2 and 84.5 kW/cm 2 . High power operation was achieved by using the relatively low dislocation density GaN and low resistance superlattices. 1 Introduction Nitride-based heterojunction bipolar transistors (HBTs) have the potential to operate in high-temperature and/or high-power conditions with uniform threshold voltages and high current densities. The first Npn AlGaN/GaN HBT was reported in 1998 with the current gain of 3 [1], and recent performance was that the AlGaN/GaN HBTs operated at the current density of 1 kA/cm 2 with the current gain of ∼ 18 [2]. Pnp nitride-based HBTs have some advantages over Npn nitride-based HBTs. First, a large emitter -base conduction band offset, which is larger than the valence band offset, prevents a backward injection current from the base to the emitter. Second, we can easily achieve a high base doping concentration above 10 18 cm -3 , which results in low base and contact resistances. Third, we can form an ultra-thin base with heavy Si doping, which improves device characteristics. Moreover, hightemperature operation is promising because it improves the conductivity of the p-type layer at high temperature. The common-emitter current -voltage (I-V) characteristics of Pnp AlGaN/GaN HBT were reported in 2002 for the first time [3]. At that time, the collector current at the maximum current gain and the breakdown voltage at room temperature were 0.02 mA and 10 V, respectively, for a 90 µm × 150 µm device. There were two main problems for this device. One is relatively small collector current and the other is low breakdown voltage. In this paper, we report the high-power operation of Pnp AlGaN/GaN HBTs with p-type superlattice emitter and subcollector toward high power operation.

show abstract

“…The estimation of the potential spike energy can be employed to examine the existence of the potential spike [12]. The forward transfer current I C F is measured under the biased E-B junction while shortening the B-C junction.…”

Section: Resultsmentioning

confidence: 99%

“…Next, the B-E junction is shortened while the B-C junction is biased to measure the reverse transfer collector current I E R . The potential spike energy V E can be determined as [12]:…”

Section: Resultsmentioning

confidence: 99%

Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike

Cheng

2001

Superlattices and Microstructures

View full text Add to dashboard Cite

Direct measurement of the potential spike energy in AlGaAs/GaAs single-heterojunction bipolar transistors

Cited by 30 publications

References 7 publications

Common-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer

Common-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer

High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors

Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike

Contact Info

Product

Resources

About