Direct Measurement of the Electrical Abruptness of a Nanowire p–n Junction

Izadi-Darbandi, Ali; McNeil, James C.; Akhtari-Zavareh, Azadeh; Watkins, Simon P.; Kavanagh, K. L.

doi:10.1021/acs.nanolett.6b00289

Cited by 25 publications

(32 citation statements)

References 34 publications

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“…Darbandi et al measured holograms on OMVPE grown GaAs NWs growth with tertiarybutylarsine as the group V precursor and diethylzinc and diethlyeltellurium as the p-(6x10 19 cm -3 ) and n-type (5x10 17 cm -3 ) precursors, respectively. 169 The measured depletion regions were 39nm in the n-region and 35nm in the p-region (Figure 19). The calculated depletion region from the dopant concentrations is 64nm predominantly in the n-type lower doped segment of the device.…”

Section: P-n Junction Formation During Growth and Interface Abrmentioning

confidence: 96%

Progress in doping semiconductor nanowires during growth

Dayeh

Chen

et al. 2017

Materials Science in Semiconductor Processing

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The anisotropic growth of one-dimensional or filamental crystals in the form of microwires and nanowires constitutes a rich domain of epitaxy and newly enabled applications at different length and size scales. Significant progress has been accomplished in controlling the growth, morphology, and properties of semiconductor nanowires and consequently their device level performance. The objective of this review is two-fold: to highlight progress up to date in nanowire doping and to discuss the remaining fundamental challenges. We focus on the most common semiconductor nanowire growth mechanism, the vapor-liquid-solid growth, and the perturbation of its kinetic and thermodynamic aspects with the introduction of dopants. We survey the origins of dopant gradients in nanowire growth and summarize quantification techniques for dopants and free-carrier concentrations.We analyze the morphological changes due to dopants and the influence of growth droplet seeds on composition and morphology and review growth aspects and alternatives that can mitigate these effects. We then summarize some of the remaining issues pertaining to dopant control in nanowires.

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Section: P-n Junction Formation During Growth and Interface Abrmentioning

confidence: 96%

Progress in doping semiconductor nanowires during growth

Dayeh

Chen

et al. 2017

Materials Science in Semiconductor Processing

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“…Furthermore, the doping profile is correlated with actual transistor performance metrics for method validation. 23 Previous studies of V T shifts in III–V MOSFETs have typically been attributed to quantum size effects for homogeneously doped FinFETs. 24 − 26 Here, we characterize the axial doping gradient by V T shift for ultrathin vertical gate-all-around (GAA) nanowire MOSFETs by a novel method enabled by advanced, high-precision, fabrication techniques.…”

Section: Introductionmentioning

confidence: 99%

Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance

Jönsson

Svensson

Fiordaliso

et al. 2021

ACS Appl. Electron. Mater.

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Thin vertical nanowires based on III–V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length L g of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage V T shift (∼100 mV). The method is further validated using the well-established technique of electron holography to verify the presence of the doping profile. Combined, device and material characterizations allow us to in-depth study the origin of the threshold voltage variability typically present for metal organic chemical vapor deposition (MOCVD)-grown III–V nanowire devices.

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“…Evaluation of the depletion region width in a NW p-n junction can be carried out through various methods, including wet chemical etching [25], secondary electron (SE) imaging [26,27], offaxis electron holography (EH) [28][29][30][31], electron beam induced current (EBIC) [32,33], Kelvin probe force microscopy [34,35], and other AFM-based techniques such as scanning capacitance microscopy (SCM) [36,37] and scattering-type scanning near-field optical microscopy [38]. Methods based on secondary ion mass spectroscopy including atom probe tomography are very powerful at mapping dopants [39], but they cannot evaluate the level of activation in the dopant impurities detected.…”

Section: Introductionmentioning

confidence: 99%

“…EH is a transmission electron microscopy (TEM) technique that provides two dimensional maps of the average built-in potential V bi of a p-n junction with a resolution < 5 nm. It is becoming increasingly used in the characterization of NWs, [29,[40][41][42] including SiNWs [30,31,43].…”

Section: Introductionmentioning

confidence: 99%

Abrupt degenerately-doped silicon nanowire tunnel junctions

Cordoba¹,

Teitsworth²,

Yang³

et al. 2020

Preprint

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We have confirmed the presence of narrow, degenerately-doped axial silicon nanowire (SiNW) p-n junctions via off-axis electron holography (EH). SiNWs were grown via the vaporsolid-liquid (VLS) mechanism using gold (Au) as the catalyst, silane (SiH 4 ), diborane (B 2 H 6 ) and phosphine (PH 3 ) as the precursors, and hydrochloric acid (HCl) to stabilize the growth. Two types of growth were carried out, and in each case we explored growth with both n/p and p/n sequences. In the first type, we abruptly switched the dopant precursors at the desired junction location, and in the second type we slowed the growth rate at the junction to allow the dopants to readily leave the Au catalyst. We demonstrate degenerately-doped p/n and n/p nanowire segments with abrupt potential profiles of 1.02 ± 0.02 and 0.86 ± 0.3 V, and depletion region widths as narrow as 10 ± 1 nm via EH. Low temperature current-voltage measurements show an asymmetric curvature in the forward direction that resemble planar gold-doped tunnel junctions, where the tunneling current is hidden by a large excess current. The results presented herein show that the direct VLS growth of degenerately-doped axial SiNW p-n junctions is feasible, an essential step in the fabrication of more complex SiNW-based devices for electronics and solar energy.

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Direct Measurement of the Electrical Abruptness of a Nanowire p–n Junction

Cited by 25 publications

References 34 publications

Progress in doping semiconductor nanowires during growth

Progress in doping semiconductor nanowires during growth

Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance

Abrupt degenerately-doped silicon nanowire tunnel junctions

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