Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

Liao, Chin-I; Yarn, Kao-Feng; Lin, Chien Lien; Lin, Yu Lu; Wang, Yeong-Her

doi:10.1143/jjap.42.4913

Cited by 11 publications

(6 citation statements)

References 4 publications

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“…Previously, Liao et al [6] have shown InP layers grown directly on GaAs (0 0 1) with 101 offcut toward /1 1 1S direction with a measured threading dislocation density of 5 Â 10 7 cm À 2 by MOCVD. Morales et al [7] also showed direct growth of InP on on-axis GaAs (0 0 1) via molecular beam epitaxy (MBE) with a resulting threading dislocation density of 10 8 cm À 2 .…”

Section: Introductionmentioning

confidence: 99%

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Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

Yang

Bulsara

Lee

et al. 2011

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

“…Summary of threading dislocation density results for films up to InP lattice constant on GaAs substrate in the literature and this work[6][7][8][9]12].…”

mentioning

confidence: 99%

Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

Yang

Bulsara

Lee

et al. 2011

Journal of Crystal Growth

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“…[13][14][15] Derbali et al 16 fabricated good quality InP on the less-conventionally used ͑111͒ oriented GaAs with a remarkably reduced density of TDs ͑DTDs͒. Recently, Liao et al 17 and Yarn et al 18 have shown high quality InP layers with flat uniform surface morphologies grown directly on GaAs by metal-organic vaporphase epitaxy ͑MOVPE͒. The DTD near the top surface of a 1 m thick InP nonannealed layer was 5 ϫ 10 7 cm −2 .…”

Section: Microstructural Improvements Of Inp On Gaas "001… Grown By Mmentioning

confidence: 99%

Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

Morales

García

Molina

et al. 2009

Applied Physics Letters

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“…Therefore, InP has wide applications in high electron mobility transistor and heterojunction bipolar transistor . However, an obstacle is that the brittle nature and undeveloped technology of InP limit the size and the crystal quality . It is necessary to grow InP epilayers on GaAs or Si substrates by using mature fabrication process to obtain the big size InP film .…”

Section: Introductionmentioning

confidence: 99%

Effect of thicknesses of InP epilayers on InP/GaAs heterostructure

Guo

Zhao

et al. 2017

Surface & Interface Analysis

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InP epilayers with different thicknesses were grown on GaAs substrates at a low temperature by using metalorganic chemical vapor deposition. Atom force microscope and double-crystal X-ray were carried out to investigate the morphology and the crystal quality. Transmission electron microscopy was performed to characterize the microstructure and morphology. It was found that with the epilayer thicknesses increased, the crystal quality was improved and the dislocations in epilayers were decreased. Moreover, the sample that has 150-nm InP epilayer could observe large numbers of antidislocations in the gallium arsenide substrate. The formation mechanism of antidislocations was also discussed with the analysis of crystal structure and surface morphology. Furthermore, we proposed a mechanism to explain the motion and the reaction of antidislocations. It is necessary to grow InP epilayers on GaAs or Si substrates by using mature fabrication process to obtain the big size InP film. [11][12][13][14] Antiphase domain observed in polar on nonpolar system in InP/Si heterostuctures can be avoided in InP/GaAs heterostuctures. So, GaAs material was used as substrates in this work. However, the InP/GaAs heterostuctures have 4% lattice mismatch, which results in high dislocation density when the thickness of InP epilayers reaches the critical thickness of 5 nm. 15 The dislocation was the primary problem because the crystal quality of materials was seriously affected by the big lattice mismatch. In this work, we grew InP epilayers with different thicknesses on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) at a low temperature. The aim was to explore the generation and the distribution of dislocations. Simultaneously, it was analyzed how the dislocations were affected by the epilayer thicknesses by investigating surface morphology and crystal quality. | EXPERIMENTALThe MOCVD system was used to grow InP/GaAs heterostructures. Phosphine (PH 3 ) was employed as the protective atmosphere.Trimethylindium (TMI) and PH 3 were used as group III and V source materials, respectively. The GaAs (100) substrates were chemically cleaned for 10 minutes to remove the oxide layer. After that, InP with different thicknesses (50, 150, and 400 nm) were grown on GaAs substrates at a relatively low temperature (430°C), which were labeled as samples A, B, and C, respectively.Atomic force microscope was carried out to evaluate the surface morphology and roughness. Raman spectra and DCXRD (doublecrystal X-ray diffraction) were used to investigate the crystal quality.Transmission electron microscopy was performed to examine the microstructure of InP-GaAs surface and the distribution of dislocations caused by the large lattice mismatch. The Hall effects were used to investigate the performance of InP/GaAs heterostructures with different thicknesses.

show abstract

Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

Cited by 11 publications

References 4 publications

Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

Effect of thicknesses of InP epilayers on InP/GaAs heterostructure

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