Direct Growth of High Mobility and Low‐Noise Lateral MoS₂–Graphene Heterostructure Electronics

Abstract

Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS -graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS -graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS -metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS -graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.

Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures

“…For instance, graphene/silicon heterostructures at the 2D limit have been fabricated on Ag(111) surface, in which silicon layer is in crystalline diamond cubic phase with an electronic gap of ~1 eV and the 1D interfaces are atomically abrupt with minimal intermaterial mixing/bonding. Very recently, lateral graphene/MoS 2 heterojunctions with overlapped interfacial region of 2–30 nm width have been synthesized using a seed‐free consecutive CVD method . Compared with the conventional metal‐contact MoS 2 devices, the graphene/MoS 2 FET devices exhibit improved electrical performance, i.e., relatively higher carrier mobility and lower 1/ f noise, making this kind of heterostructures very promising for the large‐scale production of all‐2D circuitry.…”

Flexible and High‐Performance All‐2D Photodetector for Wearable Devices

“…As a result, the heterointerface is atomically regular, and the band edge is sharp . Thus far, extensive theoretical and experimental efforts have been devoted to 2D contacts, and all‐2D devices including transistors, light‐emitting diodes, humidity sensors, complementary inverters, field emission tunnel diodes, mechanical resonators, and tactile sensors . Recently, there emerged several attempts on all‐2D photodetectors .…”

Electronic Transport and Thermopower in 2D and 3D Heterostructures—A Theory Perspective

“…Owing to the potential of realizing all‐2D devices including transistors, p‐n junctions, superlattices, and tunneling devices, lateral heterojunctions have drawn significant research interest in recent years. Few popular 2D lateral heterojunctions include graphene/TMD TMD/TMD, and graphene/non‐TMD heterojunctions . A recent review has tabulated different applications of various types of 2D heterojunctions.…”