Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications

Wang, Gaokai; Chen, Jingren; Meng, Jiaqi; Yin, Zhen‐Qiang; Jiang, Junyao; Tian, Yan; Li, Jingzhen; Wu, Jinliang; Jin, Peng; Zhang, Xingwang

doi:10.1016/j.fmre.2021.09.014

Cited by 28 publications

(21 citation statements)

References 39 publications

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“…The peak position at about 1367 cm −1 corresponds to the E 1u phonon mode of sp 2 hybridized boron nitride [26]. The high quality is manifested by the values of the γ BN parameter for the E 1u mode, which are relatively small compared to the values reported for epitaxial layers [18,[27][28][29]. The inset in FIG.…”

Section: Characterization Methodsmentioning

confidence: 88%

Temperature induced giant shift of phonon energy in epitaxial boron nitride layers

Iwański¹,

Tatarczak²,

Tokarczyk³

et al. 2022

Preprint

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The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work, we investigate hBN layers grown by Metal Organic Vapor Phase Epitaxy (MOVPE) using Fourier-transform Infrared (FTIR) spectroscopy in the temperature range of 160-540 K. Our measurements reveal strong differences in the character of layer-substrate interaction for as-grown and delaminated epitaxial layers. A much weaker interaction of as-grown layers is explained by wrinkles formation that reduces strain at the layer-substrate interface, which for layers transferred to other substrates occurs only in a limited temperature range. The most striking result is the observation of a giant increase in the E1u phonon energy of up to ∼ 6 cm −1 in a narrow temperature range. We show that the amplitude and temperature range of the anomaly is strongly modified by UV light illumination. The observed giant effect is explained in terms of strain generation resulting from charge redistribution between shallow traps and different defects, which can be interpreted as a result of strong electron-phonon coupling in hBN. The observed narrow temperature range of the anomaly indicates that the effect may be further enhanced for example by electrostrictive effects, expected for sp 2 boron nitride.

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Section: Characterization Methodsmentioning

confidence: 88%

Temperature induced giant shift of phonon energy in epitaxial boron nitride layers

Iwański¹,

Tatarczak²,

Tokarczyk³

et al. 2022

Preprint

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show abstract

“…Both parameters are approximately 3 times higher than those of the reference detector, and these values are also much higher than the previous reported results (Table S1). ,,,, The I – V characteristics of the 1600 °C device illuminated by a 213 nm laser with various power densities are shown in Figure d. The photocurrent increases almost linearly with increasing power density (Figure S7), suggesting that the h-BN film has high crystallinity with very few defects .…”

Section: Resultsmentioning

confidence: 99%

“…h-BN thin films were deposited on 2 in. sapphire substrates by a PLD system with a 248 nm Coherent COMPex201F KrF excimer laser, as reported previously . The optimized parameters of the laser are listed as follows: repetition rate, 5 Hz; pulse duration, 20 ns; pulse laser energy, 500 mJ.…”

Section: Methodsmentioning

confidence: 99%

“…sapphire substrates by a PLD system with a 248 nm Coherent COMPex201F KrF excimer laser, as reported previously. 32 The optimized parameters of the laser are listed as follows: repetition rate, 5 Hz; pulse duration, 20 ns; pulse laser energy, 500 mJ. Prior to the deposition of h-BN films, the sapphire substrates were sequentially dipped into ultrasonic baths of acetone, ethanol, and deionized water each for 20 min to remove contaminants and obtain a clean substrate surface.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

“…Unlike CVD which uses toxic precursors for the h-BN growth, PLD uses nontoxic solid target as precursors, and its operating conditions are also much easier to control. Unfortunately, only amorphous structured or nanosheet cluster BN films have been obtained probably arising from the limited growth temperature. − Moreover, an excessively high substrate temperature (>1350 °C) is a common feature for obtaining highly crystalline h-BN films on the widely used sapphire substrates regardless of the method of film preparation. − , However, such a high temperature is far beyond the capabilities of many commercial systems. On the other hand, high-temperature postannealing is an effective and promising approach to improve the crystalline quality of h-BN films grown at moderate temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics

Wang

Meng

Chen

et al. 2022

Crystal Growth & Design

Self Cite

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Recently, wide band gap hexagonal boron nitride (h-BN) has drawn considerable attention because of its superior properties and potential for optoelectronics applications. However, extremely high substrate temperatures are usually required to obtain highly crystalline h-BN films on dielectric substrates, which is highly desired for most electronic device applications. In this work, wafer-scale high-crystalline-quality h-BN films have been obtained via high-temperature annealing on PLD-grown amorphous BN films. It is found that the annealed h-BN film is epitaxially grown on sapphire with an orientation relationship: h-BN (0001)[11̅00]//sapphire (0001)[11̅00]. The narrow Raman peak and XRD rocking curve, as well as the observed strong excitonic emission, indicate the high crystalline quality of our epitaxial h-BN films. Moreover, the photodetectors fabricated from the annealed h-BN films exhibit an excellent device performance, suggesting that high-temperature annealing is a simple and promising strategy to obtain highly crystalline h-BN films for optoelectronic device applications.

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Coupled Tamm Phonon and Plasmon Polaritons for Designer Planar Multiresonance Absorbers

Nolen

Nordlander

et al. 2023

Advanced Materials

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Wavelength‐selective absorbers (WS‐absorbers) are of interest for various applications, including chemical sensing and light sources. Lithography‐free fabrication of WS‐absorbers can be realized via Tamm plasmon polaritons (TPPs) supported by distributed Bragg reflectors (DBRs) on plasmonic materials. While multifrequency and nearly arbitrary spectra can be realized with TPPs via inverse design algorithms, demanding and thick DBRs are required for high quality‐factors (Q‐factors) and/or multiband TPP‐absorbers, increasing the cost and reducing fabrication error tolerance. Here, high Q‐factor multiband absorption with limited DBR layers (3 layers) is experimentally demonstrated by Tamm hybrid polaritons (THPs) formed by coupling TPPs and Tamm phonon polaritons when modal frequencies are overlapped. Compared to the TPP component, the Q‐factors of THPs are improved twofold, and the angular broadening is also reduced twofold, facilitating applications where narrow‐band and nondispersive WS‐absorbers are needed. Moreover, an open‐source algorithm is developed to inversely design THP‐absorbers consisting of anisotropic media and exemplify that the modal frequencies can be assigned to desirable positions. Furthermore, it is demonstrated that inversely designed THP‐absorbers can realize same spectral resonances with fewer DBR layers than a TPP‐absorber, thus reducing the fabrication complexity and enabling more cost‐effective, lithography‐free, wafer‐scale WS‐absorberss for applications such as free‐space communications and gas sensing.

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Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications

Cited by 28 publications

References 39 publications

Temperature induced giant shift of phonon energy in epitaxial boron nitride layers

Temperature induced giant shift of phonon energy in epitaxial boron nitride layers

Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics

Coupled Tamm Phonon and Plasmon Polaritons for Designer Planar Multiresonance Absorbers

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