Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High‐Performance Deep‐Ultraviolet Light‐Emitting Diodes

Abstract

The direct coating of 2D hexagonal boron nitride (h‐BN) on insulating solid glass will endow glass with advanced properties, thus offering killer applications of the new type hybrid of h‐BN glass. However, daunting challenges still remain regarding the direct growth methodology of h‐BN on glass. Herein, a catalyst‐free chemical vapor deposition route for the direct synthesis of 5 in. uniform h‐BN thin films on functional quartz and sapphire glass is developed. The optical transparency, surface wetting, and thermal conductivity of glass are readily tailored by varying the deposited h‐BN thicknesses from monolayer to over 20 layers. Encouragingly, the as‐obtained h‐BN/sapphire glass can serve as a stress‐releasing substrate for the van‐der‐Waals epitaxial growth of AlN functional layers, as well as a thermal conductive template for constructing high‐performance deep‐ultraviolet light‐emitting diodes. This work hereby provides a brand new direction for the application of h‐BN glass in next‐generation solid‐state lighting devices.

Structure, Properties and Applications of Two‐Dimensional Hexagonal Boron Nitride

“…[185] Transition metals are among the most common substrates for h-BN synthesis, including Cu, [15,181,[185][186][187] Ni, [183,184,188] Pt, [189] Au, [11] Cu-Ni alloy, [190] etc. Some research groups have also demonstrated direct growth of h-BN on dielectric substrates, [191][192][193][194][195][196][197][198][199] and showed continuous h-BN films without obvious morphology. This is further elaborated in the subsection 'Growth on non-metal substrate'.…”

“…Optical images of h-BN are shown also in[223] e) a quartz substrate and f) a sapphire substrate. Reproduced with permission [199]. Copyright 2018, Wiley-VCH.…”

Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe2B alloy

“…As the most promising technique, chemical vapor deposition (CVD) was employed to achieve large-area monolayer and few layer h-BN on metal or dielectric substrates by using ammonia borane (NH 3 $BH 3 ) or borazine (B 3 N 3 H 6 ) as the precursor. [14][15][16][17][18][19][20][21][22][23] However, the inhomogeneous thickness, poor crystallinity, toxicity of precursors and complicated procedures limits the application in practical 2D devices. High quality, thickness uniformity, low cost and facile synthesis remain extremely challenging for compound 2D layered materials such as h-BN.…”

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

“…In addition, the wet transfer process from metallic surfaces to target substrates would probably degrade the quality of the h-BN and then limit its application in microelectronics. We also noticed that there have been several reports about the direct synthesis of h-BN films on dielectric substrates 21,22 , but the low thickness control and high crystallinity of h-BN films are issues that remain elusive [21][22][23][24] .…”