Light
absorption by n-silicon nanowires (SiNWs) grown by a chemical
etching method is augmented by tethering photoresponsive and highly
luminescent nitrogen-doped graphene quantum dots (N-GQDs) and poly[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)]
(PCDTBT) to a SiNW array. The resultant N-GQDs@PCDTBT@SiNW photoanode
affords a wide, continuous, and intense absorption band spanning from
∼350 to 1200 nm wavelength range, enabling maximum light uptake,
with a work function of ∼4.74 eV, deep enough to not serve
as a charge-trapping state. Under illumination, efficient charge separation
in this ternary composite is ensured by the p-type semiconducting
nature of N-GQDs with a shallow valence band (VB) that allows for
rapid hole extraction from the VBs of SiNW and PCDTBT and their rapid
relay to the bromide ions in the electrolyte. This is simultaneously
accompanied by fast, excited electron injection from N-GQDs and PCDTBT
to the SiNW via a cascade process, thus minimizing back electron transfer
to the tribromide ions. When the N-GQDs@PCDTBT@SiNW photoanode is
coupled with a highly electrocatalytic and electrically conductive
multiwalled carbon nanotube (MWCNT)@C-fabric counter electrode and
a bromine/bromide electrolyte, a power conversion efficiency of 13.18%
is achieved for this liquid junction solar cell, which is significantly
enhanced compared to that of the SiNW/HBr,Br2/C-fabric
cell (4.37%). The roles of N-GQDs, PCDTBT, and MWCNTs are independently
quantified to explain the observed solar cell performance.