2017
DOI: 10.1016/j.arabjc.2013.07.032
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Direct growth and photoluminescence of silicon nanowires without catalyst

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Cited by 11 publications
(7 citation statements)
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“…The Si–(O) 2 –Si (peroxo), Si–OH (hydroxyl), and Si–O–Si (oxy) bonds at the surface contribute to the observed strong emission. Similar strong photoluminescence peaks in the visible region have been observed in the past for Si nanowires and for porous silicon as well. The CoS/T-Si composite, however, exhibits a profile similar to that of T-Si.…”
Section: Resultssupporting
confidence: 86%
“…The Si–(O) 2 –Si (peroxo), Si–OH (hydroxyl), and Si–O–Si (oxy) bonds at the surface contribute to the observed strong emission. Similar strong photoluminescence peaks in the visible region have been observed in the past for Si nanowires and for porous silicon as well. The CoS/T-Si composite, however, exhibits a profile similar to that of T-Si.…”
Section: Resultssupporting
confidence: 86%
“…The formation of Si–O–H, Si–O–O–Si, and Si–O–Si bonds occurs at the surfaces, and the energy levels of these defects lie at values that are positioned above the conduction band minimum, which explains the higher energy electronic transitions and hence the emission in the visible region. Similar observations have been made in the past for 1D-SiNWs prepared without a catalyst . In another study on SiNWs prepared by laser ablation at high temperature, the emission in the visible region was attributed to the defect states produced by the amorphous silicon oxide layer formed over crystalline SiNWs .…”
Section: Resultsmentioning
confidence: 99%
“…Similar observations have been made in the past for 1D-SiNWs prepared without a catalyst. 34 In another study on SiNWs prepared by laser ablation at high temperature, the emission in the visible region was attributed to the defect states produced by the amorphous silicon oxide layer formed over crystalline SiNWs. 35 More experimental evidence for the presence of defect states was obtained through the deconvolution of the core level Si2p XPS spectrum, shown in the Supporting Information (as Figure S6).…”
Section: ■ Introductionmentioning
confidence: 99%
“…The fluorescence spectrum of SiNW (Figure 5a) shows broad emission from 400 to 550 nm with λ max at 430 nm at an excitation wavelength (λ ex ) of 320 nm. SiNWs are characterized by a large surface-to-volume ratio, which allows for water molecules, oxygen radicals, and hydroxyl groups to be adsorbed onto nanowire surfaces during their growth to result in the formation of the following bonds:  Si−O−H, Si− 27 The electronic transitions between the energy states corresponding to these surface defects on SiNWs give rise to the observed multiple emission peaks in the visible region. PCDTBT shows two strong peaks in the visible region with λ max at 418 nm, followed by a broad plateaued emission with λ mid(max) at ∼460 nm, tapering off gradually at ∼550 nm.…”
Section: ■ Results and Discussionmentioning
confidence: 99%