1982
DOI: 10.1109/tmtt.1982.1131084
|View full text |Cite
|
Sign up to set email alerts
|

Direct Frequency Modulation In AlGaAs Semiconductor Lasers

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

2
39
1
3

Year Published

2004
2004
2023
2023

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 48 publications
(45 citation statements)
references
References 19 publications
2
39
1
3
Order By: Relevance
“…On the other hand, a similar behavior has also been observed with conventional semiconductor laser diodes 11 for which an analytical model was derived; 22 we consider here the simple thermal response R(f) consisting of three cascaded first-order low-pass filters (Eq. (1)) illustrated in Fig.…”
supporting
confidence: 54%
See 1 more Smart Citation
“…On the other hand, a similar behavior has also been observed with conventional semiconductor laser diodes 11 for which an analytical model was derived; 22 we consider here the simple thermal response R(f) consisting of three cascaded first-order low-pass filters (Eq. (1)) illustrated in Fig.…”
supporting
confidence: 54%
“…7,8 While the picosecond carrier lifetime in QCLs allows a very fast modulation of the intensity above 10 GHz, 9,10 the modulation of the optical frequency-or wavelength-is limited by the thermal dynamics of the device. Indeed, unlike interband semiconductor laser diodes whose wavelength can be modulated at high speed through carrier density modulation, 11,12 the latter has no effect in QCLs because of the symmetric gain curve and associated independence of the refractive index at the gain peak (zero alpha parameter). 13 The wavelength tuning in DFB-QCLs is therefore mainly governed by the temperature dependence of the refractive index with a tuning rate of 1/k dk/dT % 7 Â 10 À5 1/K.…”
mentioning
confidence: 99%
“…A changed carrier density shifts the refractive index of the material that makes up the laser cavity and thereby changes the frequency of the lasing mode. A second mechanism that leads to changes in the optical frequency is a thermal effect that enhances frequency modulations below 5 MHz by as much as a few orders of magnitude [20], [21]. If the pumping current is modulated at a rate significantly slower than the gigahertz internal timescale typical for semiconductor lasers, then the output power and frequency will adiabatically follow the input so that they depend in a linear fashion on the current when the laser is operated far above threshold.…”
Section: A Source: Semiconductor Lasermentioning
confidence: 99%
“…Concurrent to the development of direct frequency modulation of semiconductor lasers in works such as [42], [43] performed digital data transmission experiments using a Michelson interferometer to discriminate optical frequency shift keying (FSK).…”
Section: Historymentioning
confidence: 99%