Direct femtosecond laser ablation of large-area TaSe₂, SnS₂, and TiS₂ thick films by a back ablation procedure

Abstract

Direct ablation of large-area graphene-like two-dimensional (2D) materials, i.e., tantalum diselenide ( T a S e 2 ), stannic disulfide ( S n S 2 ), and titanium disulfide ( T i S 2 ), by the back ablation method with a femtosecond laser with a repetition rate of 50 MHz and pulse width of 200 fs is studied for the first time to our knowledge. The ablation thresholds of the three kinds of materials are discussed. In addition, the optimization and ablation of narrow grooves on the films are demonstrated. Our work demonstrates the direct femtosecond laser ablation processing of the graphene-like 2D-material films and the potential of 2D-material-film-based devices.

Effects of TiS2 on Inhibiting Candida albicans Biofilm Formation and Its Compatibility with Human Gingival Fibroblasts in Titanium Implants

“…To assess the quality and structure of the synthesized TiS 2 crystals at 800 °C, samples were carefully characterized by Raman spectroscopy and X-ray diffraction (XRD), as shown in Figure . The Raman spectrum of the TiS 2 crystals (Figure a) showed the in-plane (E g ) mode at 232 cm –1 and an out-of-plane (A 1g ) mode at 336 cm –1 , which are characteristic peaks of TiS 2 , as reported in the literature. − As expected, pure titanium (smooth and structured) does not have any Raman fingerprints. The XRD spectrum of the synthesized TiS 2 (Figure b) showed peaks at 15.47°, 34.08°, 44.08°, 47.76°, 53.66°, 56.23°, 57.58°, 65.43°, and 72.10°, which correspond to the planes (001), (011), (012), (003), (110), (111), (103), (104), and (022), similar to the previously reported results.…”

THz active modulation device by electric field turned modulation characteristics of titanium sulfide nanofilm device

“…Monolayer SnS 2 , for instance, is an N-type semiconductor with a carrier mobility of 10 cm 2 /Vs and a switching ratio of 10 8 , making it suitable for highperformance active modulation devices. [18][19][20][21] In this paper, we present a study on the active and passive polarization-sensitive characterization of a SnS 2 device in the THz range. We investigate the performance of the device with different dimensions, specifically 500, 600, and 700 μm, by comparing their device constants.…”

“…The planar structure of 2D layered semiconductor materials enhances the integration of nanoelectronic devices, simplifying the integration process and reducing complexity. Monolayer SnS 2 , for instance, is an N‐type semiconductor with a carrier mobility of 10 cm 2 /Vs and a switching ratio of 10 8 , making it suitable for high‐performance active modulation devices 18–21 …”

Enabling Waveguide Optics in Rhombohedral-Stacked Transition Metal Dichalcogenides with Laser-Patterned Grating Couplers

“…Scanning probe lithography, , focused ion beams, − and direct laser patterning − have been used to fabricate micro- and nanostructures in a noninvasive way. While scanning probe lithography works well for monolayer flakes, it is impractical for bulk materials.…”