Direct fabrication of nano-gap electrodes by focused ion beam etching

Nagase, Takashi; Gamo, Kenji; Kubota, Tohru; Mashiko, Shinro

doi:10.1016/j.tsf.2005.07.031

Cited by 56 publications

(39 citation statements)

References 13 publications

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“…13,14 FIB milling is a maskless technique and widely employed to mill reproducible structures down to nanometer precision. The combination of EBL, photolithography, and FIB, where each technique is used at the length scale where it is best performing, makes FIB based nanogap fabrication an efficient way to produce a large number of nanogaps.…”

Section: Fabrication Of Reproducible Sub-5 Nm Nanogaps By a Focused Imentioning

confidence: 99%

Fabrication of reproducible sub-5 nm nanogaps by a focused ion beam and observation of Fowler-Nordheim tunneling

Wani

Hayat

et al. 2015

Applied Physics Letters

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Creating a stable high resistance sub-5 nm nanogap in between conductive electrodes is one of the major challenges in the device fabrication of nano-objects. Gap-sizes of 20 nm and above can be fabricated reproducibly by the precise focusing of the ion beam and careful milling of the metallic lines. Here, by tuning ion dosages starting from 4.6 × 1010 ions/cm and above, reproducible nanogaps with sub-5 nm sizes are milled with focused ion beam. The resistance as a function of gap dimension shows an exponential behavior, and Fowler-Nordheim tunneling effect was observed in nanoelectrodes with sub-5 nm nanogaps. The application of Simmon's model to the milled nanogaps and the electrical analysis indicates that the minimum nanogap size approaches to 2.3 nm.

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Section: Fabrication Of Reproducible Sub-5 Nm Nanogaps By a Focused Imentioning

confidence: 99%

Fabrication of reproducible sub-5 nm nanogaps by a focused ion beam and observation of Fowler-Nordheim tunneling

Wani

Hayat

et al. 2015

Applied Physics Letters

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“…However, considering the dimensions of the molecular device, the beam diameter appears to be too large to fabricate nanogaps smaller than 10 nm. Nagase et al [32,138,139] introduced a Ti protective layer, which had a much lower etching rate than Au, and monitored in situ the etching steps by measuring a current fed to the Au electrodes, to form nanogaps much narrower than a FIB spot size, i.e., as small as 3 nm.…”

Section: Focused Ion Beam and Oxidative Plasma Ablation For Nanogap Ementioning

confidence: 99%

Nanogap Electrodes

2009

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Nanogap electrodes (namely, a pair of electrodes with a nanometer gap) are fundamental building blocks for the fabrication of nanometer‐sized devices and circuits. They are also important tools for the examination of material properties at the nanometer scale, even at the molecular scale. In this review, the techniques for the fabrication of nanogap electrodes, the preparation of assembled devices based on the nanogap electrodes, and the potential application of these nanodevices for analysis of material properties are introduced. The history, the research status, and the prospects of nanogap electrodes are also discussed.

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“…In many of these applications, device performance depends critically on both the gap size as well as the feature dimensions 20 , and is sensitive to geometric and surface imperfections that often lead to a significant deterioration in performance 21 . Most methods for achieving sub-15 nm gaps, such as electromigration break junction 22 , direct ion beam milling 23 , and controlled electroplating 24 require performing active feedback control processes to achieve the desired gap size, thereby significantly limiting throughput and process compatibility. Alternatively, sub-10 nm resolution has been achieved directly with electron beam lithography; however, obtaining this patterning resolution requires use of the high contrast resist, hydrosilsesquioxane (HSQ) 1 .…”

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confidence: 99%

High resolution fabrication of nanostructures using controlled proximity nanostencil lithography

Jain

Aernecke

Liberman

et al. 2014

Applied Physics Letters

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Nanostencil lithography has a number of distinct benefits that make it an attractive nanofabrication processes, but the inability to fabricate features with nanometer precision has significantly limited its utility. In this paper, we describe a nanostencil lithography process that provides sub-15 nm resolution even for 40-nm thick structures by using a sacrificial layer to control the proximity between the stencil and substrate, thereby enhancing the correspondence between nanostencil patterns and fabricated nanostructures. We anticipate that controlled proximity nanostencil lithography will provide an environmentally stable, clean, and positive-tone candidate for fabrication of nanostructures with high-resolution.Significant advances in device physics across optical, electrical, and magnetic modalities have been enabled by the ability to fabricate structures with nanoscale precision. There is currently a large variety of top-down nanostructure fabrication methods available, such as electron beam lithography 1 ,

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Direct fabrication of nano-gap electrodes by focused ion beam etching

Cited by 56 publications

References 13 publications

Fabrication of reproducible sub-5 nm nanogaps by a focused ion beam and observation of Fowler-Nordheim tunneling

Fabrication of reproducible sub-5 nm nanogaps by a focused ion beam and observation of Fowler-Nordheim tunneling

Nanogap Electrodes

High resolution fabrication of nanostructures using controlled proximity nanostencil lithography

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