Direct extraction method for stripline packaged field effect transistor small signal equivalent circuit model

Abstract

A new method for the extraction of the small signal model parameters for packaged field effect transistors (FETs) is proposed in this article. This method differs from previous ones by extracting the packaging model parameters under active bias conditions without global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of extrinsic packaging model parameters are extracted by using a set of closed form expressions based on the coaxial measurement for packaged device and on-wafer measurement for chip. Good agreement is obtained between simulated and measured results for a gallium arsenide MESFET with 0.5 lm gatelength and 400 lm gatewidth over a wide range of bias points up to 8 GHz.

Characterization of high‐photocurrent and high‐speed INP‐based uni‐traveling‐carrier photodiodes at 1.55‐μm wavelength

“…The accuracy of the results depends greatly on the parameters of the equivalent circuit model, thus a good equivalent circuit model is not merely helpful for prediction of the performances of devices but also important for extracting model parameters conveniently and accurately . Numerical optimization techniques are usually used to determine the optimal values of model parameters . However, the accuracy of the optimization methods can vary largely up to the optimization method used and the initial values of model parameters selected .…”

“…Numerical optimization techniques are usually used to determine the optimal values of model parameters . However, the accuracy of the optimization methods can vary largely up to the optimization method used and the initial values of model parameters selected . Nonphysical and nonunique results of the extracted parameter could be generated.…”

“…Nonphysical and nonunique results of the extracted parameter could be generated. Analytical methods usually allow extracting a unique and physically meaningful set of parameters from a set of closed‐form expressions based on the measurement results of devices . However, some parameters may be difficult to be extracted directly using analytical methods.…”

“…It is obtained by using optimization method. The results obtained from analytical method are taken as an initial value for the subsequent fitting and optimization procedure, leading to the final results of all the parameters of the equivalent circuit model . The semi‐analytical method combines the advantages of the analytical and numerical optimization methods, to enable the extracted results more accurate.…”

High-speed and high-photocurrent InP-based uni-traveling-carrier photodiode

“…The accuracy of the results depends greatly on the parameters of the equivalent circuit model; thus a good equivalent circuit model is not merely helpful for prediction of the performances of devices but also important for extracting model parameters conveniently and accurately [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37]. Numerical optimization techniques are usually used to determine the optimal values of model parameters [35,38].…”