Direct Evidence of Surface Charges in n-Type Al-Doped ZnO

Zhou, Dongming; Wang, Peijian; Roy, Chris R.; Barnes, Michael D.; Kittilstved, Kevin R.

doi:10.1021/acs.jpcc.8b04718

Cited by 26 publications

(30 citation statements)

References 36 publications

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“…It is worth noting that similar effects have been observed previously for various metal oxide NCs, including ZnO. 41,42,43,44 As mentioned earlier, all synthesized particles are crystalline, as confirmed by XRD data as well as by high resolution TEM and the associate Fast Fourier Transform (FFT) presented in Figure 2f,g. Importantly, while we studied the growth of ZnO by isolating the nucleation event through the swift injection of the first 0.33 mmol of precursor, we demonstrated that this modification has little or no effect on the final product compared to a conventional continuous addition method, as shown in Figure S2 and Figure S4.…”

Section: Resultssupporting

confidence: 85%

Continuous Growth Synthesis of Zinc Oxide Nanocrystals with Tunable Size and Doping

et al. 2019

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Chemical syntheses of nanocrystals using colloidal techniques enable the production of a large variety of nanomaterials of a desired size, shape and composition. Therefore, these syntheses hold tremendous promise for the production of nanoparticles for next-generation technologies.However, they suffer from scalability issues, which can limit, or prevent, their translation into commercial technologies. Here we show the synthesis of zinc oxide nanocrystals with controlled size and doping using a continuous growth method, which is easily scalable. We demonstrate the tunable growth of pure ZnO nanocrystals from ~5 nm up to ~30 nm, and the synthesis of plasmonic ZnO nanocrystals by incorporating substitutional trivalent dopants such as aluminium, gallium and indium. We investigated the growth kinetics of these nanocrystals and used a variety of characterization techniques to fully elucidate the relationship between synthetic conditions and nanocrystal properties. We validate our reaction method by synthesizing Al-doped ZnO nanocrystals on a gram-scale, and with a reaction yield of 100%. These nanocrystals are used to deposit thin coating with excellent transparency and enhanced electrical conductivity compared to native ZnO. heating rate of 5 °C/min in air. Energy dispersive X-ray (EDX) spectra were acquired on a Nova 200 NanoSEM with a voltage of 15 kV. Scanning electron microscopy (SEM) images were acquired on a FEI Verios 460L SEM operated at 2 kV and 25 pA. ASSOCIATED CONTENT Supporting Information. Additional characterizations and data (Figure S1-S21 and Table S1-S2): UV-Vis-NIR, FTIR and PL spectra; XRD patterns; TEM and SEM images; size distribution histograms; crystallite size values; TGA scan; photo of the reaction setup; and additional tables. This material is available free of charge via the Internet at http://pubs.acs.org AUTHOR INFORMATION

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Section: Resultssupporting

confidence: 85%

Continuous Growth Synthesis of Zinc Oxide Nanocrystals with Tunable Size and Doping

et al. 2019

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“…Main‐group metal elements, such as Na, [33] Al, [3] Ga, [34] In [35] and Sn [16] element etc, were widely used as dopants of ZnO. According to the various doping elements, it can divide into p‐type and n‐type doping [33,36a,b,c] . When the dopant is the GroupI (Li, Na and K), the p‐type doping characteristic appears.…”

Section: Metal Element Dopingmentioning

confidence: 99%

“…The self‐compensation response of acceptor doping is inhibited and the acceptor energy level generated, which induces the material p‐type conductive characteristics. The n‐type doping (donor doping) behavior appears with metals (Al, Ga, In, Sn) as the ZnO dopants [36a] . The donor doping can produce a large number of donor electrons, which improves the conductivity of ZnO, induces the defects and reduces grain size of ZnO.…”

Section: Metal Element Dopingmentioning

confidence: 99%

Advances in Doped ZnO Nanostructures for Gas Sensor

Wang

Gong

et al. 2020

The Chemical Record

116

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Gas sensors based on metal oxides semiconductor (MOS) have attracted extensive attention from both academic and industry. ZnO, as a typical MOS, exhibits potential applications in toxic gas detection, owning to its wide band gap, n-type transport characteristic and excellent electrical performance. Meanwhile, doping is an effective way to improve the sensing performance of ZnO materials. In this review, the effects of different types of doping on morphology, crystal structure, band gap and depletion layer of ZnO materials are comprehensively discussed. Theoretical analysis on the strategies for enhancing the sensing properties of ZnO is also provided. This review puts forward the reasonable insight for designing efficient n-type ZnO-based semiconductor oxide sensing materials.

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“…[1][2][3][4][5][6] Since the 1980s, the significant role of dimensionality has been recognized apart from the bulk phase, inspiring the swift development of low-dimensional materials (0D, 1D, 2D). [7][8][9][10] The realm of 0D quantum dots, [11][12][13][14] 1D nanowire, [15][16][17][18][19] nanotube, [20][21][22][23][24] etc., has become hot research spots in succession. However, 2D materials remained to be a silent zone somehow.…”

Section: Introductionmentioning

confidence: 99%

Toward Wafer‐Scale Production of 2D Transition Metal Chalcogenides

Wang

Yang

2021

Adv Elect Materials

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When the timeline reached 2004, graphene, the single layer of graphite, was discovered through a scotch-tape exfoliation method and was found to have ultrahigh mobility. [25][26][27] Various 2D materials such as transition metal chalcogenides (TMCs), [28][29][30] boron nitrides (BNs), [31,32] black phosphorus, [33,34] and some new materials including Si, [35] Te, [36] and black arsenic-phosphorus [37] were subsequently synthesized, enabling the fabrication of numerous novel devices. The field of 2D materials is now making strong voice, which is no longer ignored by the scientific and technological community. [38][39][40] Among the various 2D materials, the TMCs constituted by the transition metal elements (M) and the chalcogen elements (X) are a large family. M can range from group 4B to group 10 in the periodic table, while X is S, Se, or Te. [41][42][43][44][45][46][47] Figure 1a exhibits the binary TMCs that have already been explored. This variation of composition of elements transfers to a wide range of properties ranging from insulators (e.g., HfS 2 ), [48,49] semiconductors (e.g., MoS 2 , WS 2 ), [50,51] semimetals (e.g., MoTe 2 , TiSe 2 ), [52,53] to metals (e.g., NbSe 2 , VS 2 ). [54][55][56] Furthermore, TMCs can form alloys in the formula such as WSe 2−x S x , with composition-tunable properties. [57][58][59] Unlike semimetallic graphene, semiconducting TMCs usually possess a bandgap. For example, MoS 2 exhibits a bandgap, transitioning from indirect bandgap to direct bandgap when it thins from bulk phase to monolayer (Figure 1b), boosting the photoluminescence (PL) efficiency. [51,[60][61][62] Additionally, inversion symmetry breaking and large spin-orbit interaction, resulting in two energetic degenerate but inequivalent valleys in the band structure of a TMC (Figure 1c), may lead to breakthroughs in valleytronics and spintronics. [63][64][65][66][67][68][69][70] A few TMCs (e.g., NbSe 2 , TaS 2 , VSe 2 ) have shown superconductivity, [71,72] charge density wave [73,74] and Mott transition (transition from metal to nonmetal). [75,76] In addition, some novel TMCs such as Fe 3 GeTe 2 display intrinsic magnetism with gate-tunable Curie points. [66,77] Semimetallic TMCs like WTe 2 show topological structures in the energy band, enabling the study on topological physics. [78,79] The rich intrinsic properties and superior tunability of TMCs hold great promise for all kinds of technologically important applications in electronics, optoelectronics, spintronics, valleytronics, etc. (Figure 1d). [51,[80][81][82][83][84][85][86][87][88][89][90][91] Due to numerous unique properties of 2D TMCs, devices such as transistors, photodetectors (PDs), and photodiodes based on 2D TMCs have been actively pursued. The ultimate destination of the miniaturization of the electronic devices will 2D transition metal chalcogenides (TMCs) have attracted tremendous interest from both the scientific and technological communities due to their variety of properties and superior tunability through layer number, composition, and inter...

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Direct Evidence of Surface Charges in n-Type Al-Doped ZnO

Cited by 26 publications

References 36 publications

Continuous Growth Synthesis of Zinc Oxide Nanocrystals with Tunable Size and Doping

Continuous Growth Synthesis of Zinc Oxide Nanocrystals with Tunable Size and Doping

Advances in Doped ZnO Nanostructures for Gas Sensor

Toward Wafer‐Scale Production of 2D Transition Metal Chalcogenides

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