Direct Evidence of Carrier Excitation from Intermediate Band States in GaPN by Two-Wavelength Excited Photoluminescence

Islam, A. Z. M. Touhidul; Hanaoka, Tsukasa; Onabe, Kentaro; Yagi, Shuhei; Kamata, Norihiko; Yaguchi, Hiroyuki

doi:10.7567/apex.6.092401

Cited by 10 publications

(8 citation statements)

References 22 publications

(25 reference statements)

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“…Relatively high intensities of NN 3 and NN 4 peaks indicate the low average content of N atoms diluted into GaPN parasitic islands and also show the quasi-direct bandgap of alloy. The concentration of nitrogen impurities can be estimated as 0.2–0.3% [ 67 , 73 , 74 , 75 , 76 ].…”

Section: Resultsmentioning

confidence: 99%

Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

et al. 2020

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Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

et al. 2020

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“…Combination of experimental intensity change as a function of the BGE density with the rate equation analysis of trap filling effect based on the SRH statistics enabled us to open a way of determining CR parameters quantitatively as the scheme of two‐wavelength excited photoluminescence (TWEPL) . Detection and investigation of CR levels have already been reported for different types of semiconductors like GaAs/AlGaAs QWs , GaN/InGaN QWs , AlGaN QWs , GaN , GaP 1− x N x , and Ba 3 Si 6 O 12 N 2 :Eu 2+ phosphors .…”

Section: Introductionmentioning

confidence: 99%

Spectral change of intermediate band luminescence in GaP:N due to below‐gap excitation: Discrimination from thermal activation

Kamata

Suetsugu

Haque

et al. 2016

Physica Status Solidi (b)

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As an intermediate band (IB) originating from discrete nitrogen (N) levels is formed in GaP:N with increasing N concentration, GaP1−xNx alloy is considered to be a promising candidate for IB‐type solar cells. We studied the IB luminescence of a GaP1−xNx with 0.56% N and detected carrier recombination (CR) levels by superposing a below‐gap excitation (BGE) light of 1.17 eV. We resolved a high‐energy component of 2.15 eV in the IB luminescence, Ihigh, from total luminescence intensity Iall. With increasing the BGE density at fixed temperature of 5 K, the amount of decrease in Ihigh was distinctly smaller than that of simple temperature rise without the BGE at the same Iall value. We conclude that the observed intensity change of the IB luminescence due to the BGE comes not from thermal activation, but from optical excitation among the IB, conduction band, and CR levels in GaP1−xNx. It is of primal importance to understand CR levels toward determining their origins and eliminating them for realization of efficient IB‐type solar cells.

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“…A plausible competing channel could be photoexcitation of the electrons from N-related states that gives rise to the monitored PL emissions, thereby reducing the PL intensity. 37 …”

Section: Excitation Power Dependencementioning

confidence: 99%

Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

Dagnelund

Huang

et al. 2015

Journal of Applied Physics

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By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate that the same hole traps can be found in various MBEgrown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity. V C 2015 AIP Publishing LLC. [http://dx

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Direct Evidence of Carrier Excitation from Intermediate Band States in GaPN by Two-Wavelength Excited Photoluminescence

Cited by 10 publications

References 22 publications

Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Spectral change of intermediate band luminescence in GaP:N due to below‐gap excitation: Discrimination from thermal activation

Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

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