Direct evidence for structural transformation and higher thermal stability of amorphous insbte phase change material

The crystallization of thin Sb2Te films with vacuum annealing and an electron beam

“…The addition of scandium and yttrium to antimony telluride leads to a reduction in thermal conductivity and an increase in the energy efficiency of PCM devices [23]. The features of the phase transition in materials based on Sb-Te as a function of temperature [16,25] and composition changes [22] are investigated.…”

Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials

“…GST is also widely used in the PCM due to its rapid phase transition feature [1]. PCM has successfully exhibited as a high-speed memory device [10] and is currently being explored for multiple data storage [11,12]. The data retention capability of PCM relies on the resistance stability of amorphous and crystalline phases [13].…”

Simultaneously higher thermal stability and lower resistance drifting for Sb/In48.9Sb15.5Te35.6 nanocomposite multilayer films

“…Its 10-year data retention temperature was only 85 °C, while household appliances and automotive systems demanded for the data to be stored at a temperature higher than 125 °C for 10 years. 9 The melting temperature of GST was about 620 °C with high reset current, which was prone to thermal crosstalk between adjacent storage units. 10 Therefore, it was necessary to develop new phase change materials.…”

“…The experimental data on IST films confirmed that the large resistivity contrast between the amorphous and crystalline phases and higher thermal stability make it very suitable for multi-bit phase change storage devices ready for use. 18 Previous studies showed that In 48.9 Sb 15.5 Te 35.6 had good thermal stability, but slow phase transition speed and big power consumption. The composite of these two materials could better reflect their complementary advantages.…”