2022
DOI: 10.1149/1945-7111/ac690b
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Direct Electroplating on Indium-Tin-Oxide-Coated Textured and Polished Silicon Substrates via Transition Metal Alloyed Interlayers

Abstract: Fe electroplating was used on polished or pyramidally textured indium-tin-oxide (ITO)-coated silicon substrates as an initial layer for subsequent Ni and Cu plating. Up to 15 μm thick Cu layers were deposited on the Ni/Fe intermediate layer. The adhesion strength of this metal layer stack was qualitatively shown using the scotch tape method and quantified by measuring the pull-off stress of the metal stack on ITO. 1.44 and 1.28 MPa was applied to pull off the metal stack from polished and pyramidally textured … Show more

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“…The combined effect of the reduction in grain boundary energy and the elastic energy of dislocations could have led to the observed self-annealing in the investigated Cu film. The average grain size was about 900 nm for the electroplated Cu films 672 h after deposition [20].…”
Section: Resultsmentioning
confidence: 99%
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“…The combined effect of the reduction in grain boundary energy and the elastic energy of dislocations could have led to the observed self-annealing in the investigated Cu film. The average grain size was about 900 nm for the electroplated Cu films 672 h after deposition [20].…”
Section: Resultsmentioning
confidence: 99%
“…In recent research conducted by Politze et al, the authors investigated using Fe electroplating as an initial layer for subsequent Ni and Cu plating on polished or pyramidally textured indium-tin-oxide-coated silicon substrates [20]. The Fe layer acted as an intermediate between the ITO-coated substrate and the Cu layer.…”
Section: Introductionmentioning
confidence: 99%
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