Direct electron-beam patterning for nanolithography

Lee, K. L.

doi:10.1116/1.584652

Cited by 59 publications

(21 citation statements)

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“…As shown in Figure 4, the vertical growth rate of SiO x is proportional to the TEOS pressure and the growth behavior is similar to that reported by other groups (Hubner and Plontke 2001, Kohlmann et al 1993, Lee and Hatzakis 1989, Schiffmann 1993. The data show a linear growth rate for lower times and the overall growth rate at low times is proportional to the growth pressure, ranging from 2.3 nm/s at 1 × 10 −3 Pa to 8.6 nm/s at 3.6 × 10 −3 Pa and 21.6 nm/s at 8 × 10 −3 Pa for beam current of 3.78 pA at high pressure, 4.72 pA at medium pressure, 4.68 pA at low pressure.…”

Section: Resultssupporting

confidence: 88%

Pressure effect of growing with electron beam‐induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor

et al. 2006

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Summary: Electron beam-induced deposition (EBID) provides a simple way to fabricate submicron-or nanometerscale structures from various elements in a scanning electron microscope (SEM). The growth rate and shape of the deposits are influenced by many factors. We have studied the growth rate and morphology of EBID-deposited nanostructures as a function of the tungsten hexafluoride (WF 6 ) and tetraethylorthosilicate (TEOS) precursor gas pressure and growth time, and we have used Monte Carlo simulations to model the growth of tungsten and silicon oxide to elucidate the mechanisms involved in the EBID growth. The lateral radius of the deposit decreases with increasing pressure because of the enhanced vertical growth rate which limits competing lateral broadening produced by secondary and forward-scattered electrons. The morphology difference between the conical SiO x and the cylindrical W nanopillars is related to the difference in interaction volume between the two materials. A key parameter is the residence time of the precursor gas molecules. This is an exponential function of the surface temperature; it changes during nanopillar growth and is a function of the nanopillar material and the beam conditions.

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Section: Resultssupporting

confidence: 88%

Pressure effect of growing with electron beam‐induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor

et al. 2006

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“…103 Data presented in some reports do not allow sufficient quantification to distinguish precisely this behavior but are consistent in the trend that the growth rate is higher at low voltages than at high voltages. 16,22,72,104,105 A different type of behavior is shown in Fig. 21: An increase in the deposit height with increasing energy between 2 and 20 kV, after which the deposit height stays constant or shows a slight decrease.…”

Section: Height and Widthmentioning

confidence: 99%

“…Annealing of lines deposited from Me 2 -Au-tfac or Co 2 ͑CO͒ 8 at temperatures around 300°C gave dewetting instead of wetting: the lines separated into solidified droplets. 104,121,161 Apparently, the a-C matrix had oxidized and disappeared, leaving the ͑oxidized͒ metal grains.…”

Section: Annealingmentioning

confidence: 99%

A critical literature review of focused electron beam induced deposition

Dorp

Hagen

2008

Journal of Applied Physics

483

577

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An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied ͑current density, acceleration voltage, scan patterns, etc.͒. Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and ͑as far as possible͒ interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters ͑such as the local precursor pressure͒ are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally, there is a limited understanding of the mechanism of electron induced precursor dissociation. In many cases, the deposit composition is not directly dependent on the stoichiometric composition of the precursor and the electron induced decomposition paths can be very different from those expected from calculations or thermal decomposition. The dissociation mechanism is one of the key factors determining the purity of the deposits and a better understanding of this process will help develop electron beam induced deposition into a viable nanofabrication technique.

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“…In many organometallic gold precursors, a common component is the bidentate ligand acetylacetonate ͑acac͒, including dimethyl-͑acetylacetonate͒ gold͑III͒ ͓Au III ͑acac͒Me 2 ͔, dimethyl-͑hexafluoroacetylacetonate͒ gold͑III͒ ͓Au III ͑hfac͒ Me 2 ͔, and dimethyl-͑trifuoroacetylacetonate͒ gold͑III͒ ͓Au III ͑tfac͒Me 2 ͔. 3,15,17,18,20,[25][26][27][28][29][30] For example, using Au III ͑acac͒Me 2 , plasmonic gold nanostructures with potential optical applications have been deposited using FEBIP; the same precursor has also been used to solder carbon nanotubes to gold electrodes. Au III ͑tfac͒Me 2 has been used in a͒ Deceased.…”

Section: Introductionmentioning

confidence: 99%

Electron beam irradiation of dimethyl-(acetylacetonate) gold(III) adsorbed onto solid substrates

Wnuk

Gorham

Rosenberg

et al. 2010

Journal of Applied Physics

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Electron beam induced deposition of organometallic precursors has emerged as an effective and versatile method for creating two-dimensional and three-dimensional metal-containing nanostructures. However, to improve the properties and optimize the chemical composition of nanostructures deposited in this way, the electron stimulated decomposition of the organometallic precursors must be better understood. To address this issue, we have employed an ultrahigh vacuum-surface science approach to study the electron induced reactions of dimethyl-͑acetylacetonate͒ gold͑III͒ ͓Au III ͑acac͒Me 2 ͔ adsorbed onto solid substrates. Using thin molecular films adsorbed onto cooled substrates, surface reactions, reaction kinetics, and gas phase products were studied in the incident energy regime between 40 and 1500 eV using a combination of x-ray photoelectron spectroscopy ͑XPS͒, reflection absorption infrared spectroscopy ͑RAIRS͒, and mass spectrometry ͑MS͒. XPS and RAIRS data indicate that electron irradiation of Au III ͑acac͒Me 2 is accompanied by the reduction in Au III to a metallic Au 0 species embedded in a dehydrogenated carbon matrix, while MS reveals the concomitant evolution of methane, ethane, carbon monoxide, and hydrogen. The electron stimulated decomposition of Au III ͑acac͒Me 2 is first-order with respect to the surface coverage of the organometallic precursor, and exhibits a rate constant that is proportional to the electron flux. At an incident electron energy of 520 eV, the total reaction cross section was Ϸ3.6ϫ 10 −16 cm 2 . As a function of the incident electron energy, the maximum deposition yield was observed at Ϸ175 eV. The structure of discrete Au-containing deposits formed at room temperature by rastering an electron beam across a highly ordered pyrolytic graphite substrate in the presence of a constant partial pressure of Au III ͑acac͒Me 2 was also investigated by atomic force microscopy.

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Direct electron-beam patterning for nanolithography

Cited by 59 publications

References 0 publications

Pressure effect of growing with electron beam‐induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor

Pressure effect of growing with electron beam‐induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor

A critical literature review of focused electron beam induced deposition

Electron beam irradiation of dimethyl-(acetylacetonate) gold(III) adsorbed onto solid substrates

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