Direct Digital Synthesizer With Sine-Weighted DAC at 32-GHz Clock Frequency in InP DHBT Technology

Turner, S.E.; Kotecki, David E.

doi:10.1109/jssc.2006.881552

Cited by 65 publications

(28 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The implemented ultra-high speed DDS presents the first mm-wave quadrature DDS design reported so far. When compared with other single-phase mm-wave DDSs [1][2][3], it's more complex, yet more compact and has lower power, as shown in Table 1. The minimum size of the InP transistor is much larger than that of the SiGe transistor.…”

Section: Architecture and Circuit Designmentioning

confidence: 99%

See 1 more Smart Citation

An X/Ku-band frequency synthesizer using a 9-Bit quadrature DDS

Dai

Yang

et al. 2008

2008 IEEE Custom Integrated Circuits Conference

View full text Add to dashboard Cite

Abstract-This paper presents an X/Ku-band fine-tuning frequency synthesizer using a quadrature DDS implemented in a 0.18ȝm SiGe BiCMOS technology. The frequency synthesizer comprises a 9-bit quadrature DDS, an 11.7GHz quadrature VCO and image rejection mixers. The outputs of the quadrature DDS are down-converted to 9.4~11.7GHz and up-converted to 11.7~14.0GHz, respectively. The die area of the synthesizer is 3.0x3.0mm 2 and the power consumption is 2.6W under a 3.3V supply. The chip is measured with a 48-pin leadless free ceramic package and external cooling.

show abstract

Section: Architecture and Circuit Designmentioning

confidence: 99%

“…A DDS generates a digitized waveform of a given frequency by accumulating phase changes at a higher clock frequency. Microwave range DDS has been developed in both InP and SiGe technologies [1][2][3] with output frequency up to 10GHz. It's highly desirable to develop frequency synthesis means for X/Ku-band applications.…”

Section: Introductionmentioning

confidence: 99%

An X/Ku-band frequency synthesizer using a 9-Bit quadrature DDS

Dai

Yang

et al. 2008

2008 IEEE Custom Integrated Circuits Conference

View full text Add to dashboard Cite

show abstract

“…This is true in some communication applications as well. One way to solve this problem is to use a high speed DDS chip [4,5,6]. Though these DDS chips have very high sampling frequency, the frequency resolution is too low or the chip is not commercial.…”

Section: Introductionmentioning

confidence: 99%

An ultra-high ramp rate arbitrary waveform generator for communication and radar applications

Zhang

Xie

Wang

et al. 2015

IEICE Electron. Express

View full text Add to dashboard Cite

Currently, the frequency ramp rate of most commercial direct digital synthesizer (DDS) chips is not more than several hundred MHz. In some communication or radar applications, the frequency ramp rate must reach several GHz. In order to greatly increase the frequency ramp rate, this paper proposes a full-custom multi-core & single-channel DDS (MCSC-DDS). This MCSC-DDS consists of some DDS sub-cores which are implemented in a field programmable gate array (FPGA) and a high speed digital analog converter (DAC) whose sampling frequency achieves several GHz. In FPGA, these DDS sub-cores operate in parallel to equivalent achieve ultra-high frequency ramp rate which is equal to the sampling frequency of the DAC. As an example, a compact and portable MCSC-DDS whose frequency ramp rate achieves 2.5 GHz is presented. It is mainly made up of a Virtex-5 FPGA and an AD9739. The measured chirp waveform has a maximum 2.5 GHz frequency ramp rate which demonstrates the efficiency of the MCSC-DDS.

show abstract

“…For example, high electron mobility and peak velocity of InP-based material systems have resulted in transistors with f max above 1THz [1] as well as a 32 GHz direct digital synthesizer [2]. Wide energy bandgap GaN has enabled large voltage swing as well as high breakdown voltage power devices [3].…”

Section: Introductionmentioning

confidence: 99%

The DARPA COSMOS program: The convergence of InP and Silicon CMOS technologies for high-performance mixed-signal

Raman

Chang

Dohrman

et al. 2010

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

View full text Add to dashboard Cite

The COmpound Semiconductor Materials On Silicon (COSMOS) program of the U.S. Defense Advanced Research Projects Agency (DARPA) focuses on developing transistor-scale heterogeneous integration processes to intimately combine advanced compound semiconductor (CS) devices with high-density silicon circuits. The technical approaches being explored in this program include high-density micro assembly, monolithic epitaxial growth, and epitaxial layer printing processes. In Phase I of the program, performers successfully demonstrated world-record differential amplifiers through heterogeneous integration of InP HBTs with commercially fabricated CMOS circuits. In the current Phase II, complex wideband, large dynamic range, high-speed digitalto-analog convertors (DACs) are under development based on the above heterogeneous integration approaches. These DAC designs will utilize InP HBTs in the critical high-speed, high-voltage swing circuit blocks and will employ sophisticated in situ digital correction techniques enabled by CMOS transistors. This paper will also discuss the Phase III program plan as well as future directions for heterogeneous integration technology that will benefit mixed signal circuit applications.

show abstract

Direct Digital Synthesizer With Sine-Weighted DAC at 32-GHz Clock Frequency in InP DHBT Technology

Cited by 65 publications

References 10 publications

An X/Ku-band frequency synthesizer using a 9-Bit quadrature DDS

An X/Ku-band frequency synthesizer using a 9-Bit quadrature DDS

An ultra-high ramp rate arbitrary waveform generator for communication and radar applications

The DARPA COSMOS program: The convergence of InP and Silicon CMOS technologies for high-performance mixed-signal

Contact Info

Product

Resources

About