Direct determination of trace impurities in high-purity silicon nitride by axial viewed inductively coupled plasma optical emission spectrometry using a slurry nebulization technique

Abstract

A simple, rapid and reliable method was developed for the determination of trace impurities in high-purity silicon nitride (nm- and μm-sized) by ICP-OES using a slurry nebulization technique.

Analysis of rice and wheat flour by particle nebulization ICP-MS

“…25 Compared with the LA sampling technique, the advantage of slurry nebulization is that it has the potential for direct calibrations with conventional aqueous standards using a solution nebulization introduction system. 26 Some applications of slurry nebulization ICPoptical emission spectrometry (ICP-OES) technique for the analysis of the geological and inorganic material samples are reported; [27][28][29][30][31][32][33][34] however, the matrix effects in ICP-MS are much more serious than the ICP-OES technique. Recently, we have tried to use the slurry nebulization ICP-MS technique to measure the high eld strength elements (Nb, Ta, Zr, and Hf) in silicate rocks.…”