1988
DOI: 10.1021/ac00172a011
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Direct detection of immunospecies by capacitance measurements

Abstract: Financial support of this research was provided by Biomerieux. This research was presented in a preliminary form at the Journée d'Etude Capteurs Chimiques et Biochimiques, Ecully, France, May 1987.

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Cited by 162 publications
(61 citation statements)
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“…This may perhaps be assigned to the antibody-antigen (Ab-Ag) interaction leading to a change in the dielectric/blocking properties of the electrolyteelectrode interface. 49,50 The capacitance value between the RGOant-TiO 2 based immunoelectrode and the electrolyte is 33 0 A d , where 3 0 (F m À1 ) is the permittivity of free space, 3 is the relative dielectric constant, A (m 2 ) is the surface area and d (m) is the distance. The decrease of the measured capacitance due to the increase of the distance between the electrode and electrolyte is thus expected, due to the interaction of Vc with the Ab-Vc.…”
Section: Electrochemical Response Studiesmentioning
confidence: 99%
“…This may perhaps be assigned to the antibody-antigen (Ab-Ag) interaction leading to a change in the dielectric/blocking properties of the electrolyteelectrode interface. 49,50 The capacitance value between the RGOant-TiO 2 based immunoelectrode and the electrolyte is 33 0 A d , where 3 0 (F m À1 ) is the permittivity of free space, 3 is the relative dielectric constant, A (m 2 ) is the surface area and d (m) is the distance. The decrease of the measured capacitance due to the increase of the distance between the electrode and electrolyte is thus expected, due to the interaction of Vc with the Ab-Vc.…”
Section: Electrochemical Response Studiesmentioning
confidence: 99%
“…Ion-sensitive field-effect transistors (ISFETs) and relatives (EnFETs, BioFETs, etc.) are the canonical examples [6], but similar mechanisms operate in semiconducting nanowires [7], semiconducting carbon nanotubes [8], electrolyte-insulator-semiconductor structures [9][10][11][12], suspended gate thin film transistors [13], and light-addressable potentiometric sensors [14,15]. These field-effect sensors rely on the interaction of external charges with carriers in a nearby semiconductor and thus exhibit enhanced sensitivity at low ionic strength where counterion shielding is reduced; this is explained in a recent review [16] and evidenced by the low salt concentrations often used (e.g., [7,10]).…”
Section: Introductionmentioning
confidence: 99%
“…In the last decade, simpler antibody assay methods have been proposed in which the binding of antigen to an antibody coated surface is sensed directly. A variety of optical and electronic methods for detection of specific protein binding has been developed, including the use of optical sensor devices such as plasmon resonance, reflectometry, ellipsometric techniques, all of which measure changes in refractive index profile, and capacitors (Bataillard et al, 1988) measuring changes in the dielectric constant after binding. It has also been suggested (Schenck, 1978) that FET devices can be used to detect surface polarization effects due to the formation of the antibodyantigen complex.…”
Section: Introductionmentioning
confidence: 99%