Direct current triboelectric cell by sliding an n-type semiconductor on a p-type semiconductor

Xu, Ran; Zhang, Qing; Wang, Jing Yuan; Liu, Di; Wang, Jie; Wang, Zhong Lin

doi:10.1016/j.nanoen.2019.104185

Cited by 113 publications

(132 citation statements)

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“…[ 5 ] Recently, it was found that the CE will be very different when the semiconductor is involved. [ 6 ] The current can be generated by the contact or sliding of a P‐type semiconductor against an N‐type semiconductor [ 7–9 ] (or semiconductor against metal [ 10–12 ] ), and a novel electric generator was proposed. [ 7 ] This new type of electric generator is gaining attention for that a direct current can be generated without a rectifier module.…”

Section: Figurementioning

confidence: 99%

“…[ 6 ] The current can be generated by the contact or sliding of a P‐type semiconductor against an N‐type semiconductor [ 7–9 ] (or semiconductor against metal [ 10–12 ] ), and a novel electric generator was proposed. [ 7 ] This new type of electric generator is gaining attention for that a direct current can be generated without a rectifier module. [ 8–11 ] However, the mechanism of the current generation in the CE involving semiconductors is still under debate.…”

Section: Figurementioning

confidence: 99%

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Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors

et al. 2020

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can be generated by the contact or sliding of a P-type semiconductor against an N-type semiconductor [7][8][9] (or semiconductor against metal [10][11][12] ), and a novel electric generator was proposed. [7] This new type of electric generator is gaining attention for that a direct current can be generated without a rectifier module. [8][9][10][11] However, the mechanism of the current generation in the CE involving semiconductors is still under debate.For the contact between a P-type semiconductor and an N-type semiconductor, the PN junction will be formed at the interface. [13,14] It is highly suspected that the built-in electric field in the PN junction makes the CE between the semiconductors different from that between conventional materials. Considering that, Wang et al. pointed out that the generation of the continuous direct current induced by the sliding of P-type semiconductor against N-type semiconductor is similar to the photovoltaic effect, and can be referred to as the "tribovoltaic effect." [15] The only difference is that the electron-hole pairs in tribovoltaic effect are excited during friction, in which the energy is released due to either the transition of electrons from the surface states of one side to that of another side in the contact or sliding, [16][17][18][19][20][21] or the energy released while forming a new bond at the interface, [22] just as it occurs in the CE between two conventional materials. [23][24][25][26] Then, the electron-hole pairs are separated by the built-in electric field and the external current flowing from the P-side to the N-side will be induced, as it occurs in the photovoltaic effect. [27][28][29] According to the tribovoltaic effect, the excitation efficiency of electron-hole pairs highly depends on the density of surface states of the semiconductors and the bonding interactions. Hence, the tribovoltaic current may be related to the density of surface states of the semiconductors and the sliding load, which can significantly affect the bonding interactions at the sliding interface. [22] In this work, the direct current is generated by sliding an N-type semiconductor tip over a Si sample surface using conductive atomic force microscopy (CAFM). [30,31] Both P-type and N-type Si samples with various doping concentrations are used in the experiments. Further, the Si samples are treated by inductively coupled plasma reactive ion etching (ICP-RIE), which can significantly increase the density of surface states of the semiconductors by doping or introducing defects on the surface. [32,33] It is revealed that the current density in the sliding experiments increases with increasing of the density of surface Contact electrification (CE or triboelectrification) is a common phenomenon, which can occur for almost all types of materials. In previous studies, the CE between insulators and metals has been widely discussed, while CE involving semiconductors is only recently. Here, a tribo-current is generated by sliding an N-type diamond coated tip on a P-type or N-type Si wafer...

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Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors

et al. 2020

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“…However, conventional TENGs usually use organic polymer insulation materials, and the charges generated by friction tends to accumulate on the surface of the material, resulting in an alternating output . Recently, semiconductor materials began to attract researchers' interest, and a series of work has made great progress: the tribotunneling nanogenerator based on sliding metal–insulator–semiconductor (MIS) structure, the moving Schottky diode based on metal–semiconductor (MS) structure, the triboelectric cell based on PN junction structure, and other moving heterojunction nanogenerator . Thundat and Liu et al realized an ultrahigh current density MIS nanogenerator due to quantum mechanical tunneling of the ultrathin natural oxide layer .…”

Section: Introductionmentioning

confidence: 99%

“…sliding metal-insulator-semiconductor (MIS) structure, [14][15][16][17] the moving Schottky diode based on metal-semiconductor (MS) structure, [18][19][20] the triboelectric cell based on PN junction structure, [21][22][23] and other moving heterojunction nanogenerator. [24] Thundat and Liu et al realized an ultrahigh current density MIS nanogenerator due to quantum mechanical tunneling of the ultrathin natural oxide layer.…”

mentioning

confidence: 99%

“…[18] Zhang and Xu et al reported a direct-current triboelectric cell by sliding PN junction and indicated that its mechanism may be the formation of electron-hole pairs. [22] It is true that these novel generators with continuous, high-density, and direct-current output characteristics have shown great interest and potential, but the power generation mechanisms of them remain to be extensively studied. Moreover, compared with the impedance of the electronic device or sensor (≈100 Ω), [25][26][27][28] the internal impedance of these generators is still too large (≈MΩ).…”

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Tribovoltaic Effect on Metal–Semiconductor Interface for Direct‐Current Low‐Impedance Triboelectric Nanogenerators

Zhang

Jiang

Zhao

et al. 2020

Advanced Energy Materials

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The triboelectric nanogenerator (TENG) is a new energy technology that is enabled by coupled contact electrification and electrostatic induction. The conventional TENGs are usually based on organic polymer insulator materials, which have the limitations and disadvantages of high impedance and alternating output current. Here, a tribovoltaic effect based metal–semiconductor direct‐current triboelectric nanogenerator (MSDC‐TENG) is reported. The tribovoltaic effect is facilitated by direct voltage and current by rubbing a metal/semiconductor on another semiconductor. The frictional energy released by the forming atomic bonds excites nonequilibrium carriers, which are directionally separated to form a current under the built‐in electric field. The continuous average open‐circuit voltage (10–20 mV), short‐circuit direct‐current output (10–20 µA), and low impedance characteristic (0.55–5 kΩ) of the MSDC‐TENG can be observed during relative sliding of the metal and silicon. The working parameters are systematically studied for electric output and impedance characteristics. The results reveal that faster velocity, larger pressure, and smaller area can improve the maximum power density. The internal resistance is mainly determined by the velocity and the electrical resistance of semiconductor. This work not only expands the material candidates of TENGs from organic polymers to semiconductors, but also demonstrates a tribovoltaic effect based electric energy conversion mechanism.

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High‐Performance Flexible Schottky DC Generator via Metal/Conducting Polymer Sliding Contacts

Yang

Benner

Guo

et al. 2021

Adv Funct Materials

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Dynamic Schottky direct‐current (DC) generators hold great promise for ambient mechanical energy harvesting as it overcomes the low‐current output limitation in conventional approaches. However, the lack of a fundamental understanding of DC generation in conducting polymer‐based Schottky generators has hindered their application for self‐powered wearable and implantable electronics. Here, a high‐performance, flexible Schottky DC generator with metal/conducting polymer sliding contact system is demonstrated, which exhibits a large current density (J) up to 20 A m–2 for single contact geometry and a scaled‐up DC output reaching 200 µA (J = 0.73 A m–2) and 0.8 V. The design of flexibility in such a Schottky DC generator is inherited from the long‐chain polymer concept, leading to the demonstration of a variety of device configuration of free‐standing thin film, supported thin film and nanocomposite prototype toward practical applications. It is revealed that the sliding junctions may exhibit a different mechanical energy conversion mechanism compared to the compressive conducting polymer Schottky junctions. It is also proven that the magnitude and polarity of DC generation is determined by the Schottky contact formation and interfacial electric field. The concept of a flexible Schottky generator not only shows great promise for next‐generation, self‐powered wearable devices, but also provides potential mechanisms for developing novel wearable sensors.

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Direct current triboelectric cell by sliding an n-type semiconductor on a p-type semiconductor

Cited by 113 publications

References 28 publications

Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors

Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors

Tribovoltaic Effect on Metal–Semiconductor Interface for Direct‐Current Low‐Impedance Triboelectric Nanogenerators

High‐Performance Flexible Schottky DC Generator via Metal/Conducting Polymer Sliding Contacts

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