Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon

McHugo, Scott A.; Thompson, A.C.; Perichaud, I.; Martinuzzi, S.

doi:10.1063/1.121673

Cited by 72 publications

(34 citation statements)

References 13 publications

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“…Impurities observed in mc-Si reflect a wide variety of different contamination sources, as shown in Figure 3. One contamination source is stainless steel, which both this and previous studies 15,61 have observed, likely originating from furnace parts, growth surfaces, 62 or feedstock. These and other studies 2 reveal the presence of other metals from furnace parts (Mo, Cu, Ti, and Mn) and metals possibly associated with materials coating growth surfaces 62 (e.g., Si 3 N 4 sintering agents such as Fe 63 and Hf 64 ).…”

Section: Contamination Sourcesmentioning

confidence: 98%

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Buonassisi

Istratov

Pickett

et al. 2006

Progress in Photovoltaics

171

106

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We present a comprehensive summary of our observations of metal-rich particles in multicrystalline silicon (mc-Si) solar cell materials from multiple vendors, including directionally-solidified ingot-grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal-rich particles are assessed by synchrotron-based analytical x-ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal-rich particles can be observed (metal silicide nanoprecipitates and metal-rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc-Si materials can largely be explained by variations in crystal

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Section: Contamination Sourcesmentioning

confidence: 98%

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Buonassisi

Istratov

Pickett

et al. 2006

Progress in Photovoltaics

171

106

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“…Carrier recombination at dislocations occurs primarily due to the presence of metallic impurities. [31][32][33] First direct evidence for this was given by McHugo et al 34 comparing light beam induced current mappings with synchrotron-based x-ray fluorescence. However, not only metal impurities but also oxygen seems to play a major role.…”

Section: B Light Emission From Forward-biased P-n Junctionsmentioning

confidence: 99%

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

Bothe

Ramspeck

Hinken

et al. 2009

Journal of Applied Physics

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We study the emission of light from industrial multicrystalline silicon solar cells under forward and reverse biases. Camera-based luminescence imaging techniques and dark lock-in thermography are used to gain information about the spatial distribution and the energy dissipation at pre-breakdown sites frequently found in multicrystalline silicon solar cells. The pre-breakdown occurs at specific sites and is associated with an increase in temperature and the emission of visible light under reverse bias. Moreover, additional light emission is found in some regions in the subband-gap range between 1400 and 1700 nm under forward bias. Investigations of multicrystalline silicon solar cells with different interstitial oxygen concentrations and with an electron microscopic analysis suggest that the local light emission in these areas is directly related to clusters of oxygen.

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“…Two possible interpretations of this result suggest themselves: "rstly, dislocations may be directly responsible for the trapping centers. Alternatively, dislocations may act as precipitation sites for other impurities which cause traps, rendering the complexes impervious to gettering [11]. …”

Section: Traps In Gettered Mc-simentioning

confidence: 99%

Understanding carrier trapping in multicrystalline silicon

Macdonald

Cuevas

2001

Solar Energy Materials and Solar Cells

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The physical origin of minority carrier trapping centers in multicrystalline silicon is explored in both gettered and non-gettered material. The experimental evidence suggests that there are two types of trap present. One species can be removed by gettering and is related to the presence of boron}impurity pairs or complexes. The other type is impervious to gettering and is correlated to the dislocation density. Annealing experiments reveal that the trapping centers caused by boron}impurity complexes can be dissociated, and that these trapping centers do not contribute to recombination. The e!ect of trapping centers on open-circuit voltage is shown to be negligible when the trap density is less than the dopant density.

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Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon

Cited by 72 publications

References 13 publications

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

Understanding carrier trapping in multicrystalline silicon

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