Direct correlation of defects and dark currents of InGaAs/InP photodetectors

Wang, Hongzhen; Yuan, Gu; Yu, Chunlei; Zhu, Shalu; Zhu, Yicheng; Chen, Pingping; Cao, Jiasheng; Yang, Bo; Li, Tao; Shao, Xin; Li, Xue; Gong, Haimei

doi:10.1016/j.mssp.2020.105540

Cited by 8 publications

(1 citation statement)

References 16 publications

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“…Furthermore, it is noticed that the detector exhibits self-powered characteristics when illuminated, which also proves the successful construction of the heterojunction. The dark current value represents the noise level of the detector, which is determined by interface defects, trap density, junction area, electrode geometry, etc. − At the same time, although the device exhibits a low dark current and rectification characteristics as mentioned above, due to the high carrier concentration of the ZTO and CuI thin films, the relatively rough surface brings imperfect interface contact, resulting in an increase of the system noise signal, which limits the further reduction of the dark current.…”

Section: Resultsmentioning

confidence: 99%

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Liu

Zhang

Shen

et al. 2023

ACS Appl. Mater. Interfaces

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For traditional wide-bandgap semiconductor materials, a high-temperature process is unavoidable for improving crystallization quality, so the substrate of the device is greatly limited. In this work, zinc–tin oxide (a-ZTO) amorphous oxide processed by the pulsed laser deposition method was utilized as the n-type layer, which exhibits considerable electron mobility and optical transparency, and can be deposited at room temperature. At the same time, by combining p-type CuI grown by the thermal evaporation method, a vertically structured ultraviolet photodetector based on CuI/ZTO heterojunction was obtained. The detector demonstrates self-powered properties, with an on–off ratio exceeding 104, and rapid response with a rise time of 2.36 ms and a fall time of 1.49 ms. Also, the photodetector shows long-term stability with 92% retention after 5000 s cyclic lighting and maintains reproducible response in frequency dependence measurement. Furthermore, the flexible photodetector on poly(ethylene terephthalate) (PET) substrates was constructed, exhibiting fast response and durability in the bending state. This is the first time that the heterostructure based on CuI has been applied in the flexible photodetector. The excellent results indicate that the combination of amorphous oxide and CuI has the potential for ultraviolet photodetectors, and will broaden the application range of high-performance flexible/transparent optoelectronic devices in the future.

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Section: Resultsmentioning

confidence: 99%

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Liu

Zhang

Shen

et al. 2023

ACS Appl. Mater. Interfaces

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Composition Modulation‐Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures

Guo,

Fu,

Zhang

et al. 2024

Advanced Materials

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Band alignment engineering is crucial for facilitating charge separation and transfer in optoelectronic devices, which ultimately dictates the behavior of Van der Waals heterostructures (vdWH)‐based photodetectors and light emitting diode (LEDs). However, the impact of the band offset in vdWHs on important figures of merit in optoelectronic devices has not yet been systematically analyzed. Herein, the regulation of band alignment in WSe2/Bi2Te3‐xSex vdWHs (0 ≤ x ≤ 3) is demonstrated through the implementation of chemical vapor deposition (CVD). A combination of experimental and theoretical results proved that the synthesized vdWHs can be gradually tuned from Type I (WSe2/Bi2Te3) to Type III (WSe2/Bi2Se3). As the band alignment changes from Type I to Type III, a remarkable responsivity of 58.12 A W−1 and detectivity of 2.91×1012 Jones (in Type I) decrease in the vdWHs‐based photodetector, and the ultrafast photoresponse time is 3.2 µs (in Type III). Additionally, Type III vdWH‐based LEDs exhibit the highest luminance and electroluminescence (EL) external quantum efficiencies (EQE) among p‐n diodes based on Transition Metal Dichalcogenides (TMDs) at room temperature, which is attributed to band alignment‐induced distinct interfacial charge injection. This work serves as a valuable reference for the application and expansion of fundamental band alignment principles in the design and fabrication of future optoelectronic devices.

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Unidirectional charge transport originated from defect boundary on two-dimensional heterostructure

Liu

Lei

et al. 2022

Applied Surface Science

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Direct correlation of defects and dark currents of InGaAs/InP photodetectors

Cited by 8 publications

References 16 publications

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Composition Modulation‐Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures

Unidirectional charge transport originated from defect boundary on two-dimensional heterostructure

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