Direct comparison of two-dimensional dopant profiles by scanning capacitance microscopy with TSUPREM4 process simulation

Abstract

Articles you may be interested inLimitations of the calibration curve method for determining dopant profiles from scanning capacitance microscope measurements Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal-oxide-semiconductor field-effect transistor Quantitative two-dimensional ͑2D͒ dopant profiling of a gatelike structure is achieved by scanning capacitance microscopy ͑SCM͒ on a cross-sectioned polished silicon wafer. The gatelike structures consist of heavily implanted nϩ regions separated by a lighter doped n region underneath a 0.56 m gate. The SCM is operated in the constant change capacitance mode while scanning with a 37 nm radius tip. The 2D SCM data are converted to dopant density through a physical model of the SCM/silicon interaction. The model parameters are adjusted so that the SCM dopant profile far from the gate edge fits the vertical secondary ion mass spectrometry ͑SIMS͒ profile. A 15% error in average accuracy is found between SCM and SIMS profiles evaluated over the dopant range of 10 20 -10 17 cm Ϫ3 . The same model parameters are used for all points in converting the 2D SCM data, indicating that the accuracy of the full 2D result should be comparable to that of the vertical profile. A direct comparison of the 2D SCM and 2D TSUPREM4 results is made for the first time. The agreement is generally good, but there are some notable differences.

Advances in AFM for the electrical characterization of semiconductors

“…Many of the techniques currently employed for the electrical characterization of semiconductors were originally developed with the aim of achieving high-resolution two-dimensional dopant profiling, in order to accurately calibrate simulations of semiconductor processing schemes [72] to improve their accuracy and aid in the design and development of nanoscale devices. Whilst SCM, SSRM and related techniques are actually sensitive to the location of carriers in the sample, not to the location of dopants, they have nonetheless been widely applied to this important technological problem.…”

The Influence on the Performance of Power Double Diffused MOSFET with Different Gate Layout Geometries

“…The traditional calculation is two-dimensional and idealized. However, it is very complex and difficult to get the concentration distribution by formula derivation [8][9][10][11]. The 3D simulation method is a new approach to obtain the boron concentration in the channel [12,13].…”

Local Structure and Properties of Oxide Surfaces: Scanning Probe Analyses of Ceramics

“…An alternative method of characterizing interface electronic properties is a direct measurement of local electric fields with a variation of AFM referred to as electrostatic force microscopy (EFM) 17,78-80 and other field-based scanning probes. 81,82 The measurement, described in the sidebar, allows local variations in electric field to be compared. It is possible to configure a sample arrangement such that lateral fields are applied across a sample, 83 as shown in Fig.…”