Direct comparison of three-terminal and four-terminal Hanle effects in the persistent photoconductor 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Al</mml:mi><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub><mml:mi>As</mml:mi><mml:mo>:</mml:mo><mml:mi>Si</mml:mi></mml:mrow></mml:math>

Kim, Joon-Il; Liu, Tianhan; Kountouriotis, Konstantinos; Lu, Jun; Yu, Xingxing; Adhikari, Yuwaraj; Molnár, S. von; Zhao, Jianhua; Xiong, Peng

doi:10.1103/physrevmaterials.6.024603

Cited by 3 publications

(2 citation statements)

References 49 publications

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“…[45] In order to realize effective spin injection into semiconductors, it is necessary to insert a thin layer of oxide barrier [46] or engineer the carrier density in the Schottky barrier at the interface. [47] It usually requires complicated film growth systems and nanofabrication techniques. In contrast, CISS can be regarded as a potential solution, as it is promising to form an excellent heterogeneous interface with low spin scattering and high spin injection efficiency.…”

Section: Introductionmentioning

confidence: 99%

Chiral‐Molecule‐Based Spintronic Devices

Shang

Liu

Yang

et al. 2022

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Spintronics and molecular chemistry have achieved remarkable achievements separately. Their combination can apply the superiority of molecular diversity to intervene or manipulate the spin‐related properties. It inevitably brings in a new type of functional devices with a molecular interface, which has become an emerging field in information storage and processing. Normally, spin polarization has to be realized by magnetic materials as manipulated by magnetic fields. Recently, chiral‐induced spin selectivity (CISS) was discovered surprisingly that non‐magnetic chiral molecules can generate spin polarization through their structural chirality. Here, the recent progress of integrating the strengths of molecular chemistry and spintronics is reviewed by introducing the experimental results, theoretical models, and device performances of the CISS effect. Compared to normal ferromagnetic metals, CISS originating from a chiral structure has great advantages of high spin polarization, excellent interface, simple preparation process, and low cost. It has the potential to obtain high efficiency of spin injection into metals and semiconductors, getting rid of magnetic fields and ferromagnetic electrodes. The physical mechanisms, unique advantages, and device performances of CISS are sequentially clarified, revealing important issues to current scientific research and industrial applications. This mini‐review points out a key technology of information storage for future spintronic devices without magnetic components.

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Section: Introductionmentioning

confidence: 99%

Chiral‐Molecule‐Based Spintronic Devices

Shang

Liu

Yang

et al. 2022

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“…The Hanle effect can probe the spin polarization of carriers in a semiconductor by measuring their spin precession and dephasing as they propagate through a transverse magnetic field. , In addition to determining spin lifetimes, Hanle effect measurements also report on pure spin transport and on spin accumulation, which gradually reduces to zero with increasing magnetic field strength. , In traditional electrical Hanle measurements a ferromagnet is used to generate a spin-polarized current in a transport channel that is probed through spin accumulation on a semiconductor. Recently, Xiong and co-workers generated spin-polarized current by injecting electrons from an Au electrode, which was coated with an α-helical polyalanine film, into a transport channel and detected the spin accumulation at a GaAs electrode (Au/ l -polyaniline/Si:GaAs junctions) .…”

Section: Methods For Measuring Cissmentioning

confidence: 99%

Chiral Induced Spin Selectivity

Bloom,

Paltiel,

Naaman

et al. 2024

Chem. Rev.

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Since the initial landmark study on the chiral induced spin selectivity (CISS) effect in 1999, considerable experimental and theoretical efforts have been made to understand the physical underpinnings and mechanistic features of this interesting phenomenon. As first formulated, the CISS effect refers to the innate ability of chiral materials to act as spin filters for electron transport; however, more recent experiments demonstrate that displacement currents arising from charge polarization of chiral molecules lead to spin polarization without the need for net charge flow. With its identification of a fundamental connection between chiral symmetry and electron spin in molecules and materials, CISS promises profound and ubiquitous implications for existing technologies and new approaches to answering age old questions, such as the homochiral nature of life. This review begins with a discussion of the different methods for measuring CISS and then provides a comprehensive overview of molecules and materials known to exhibit CISS-based phenomena before proceeding to identify structure−property relations and to delineate the leading theoretical models for the CISS effect. Next, it identifies some implications of CISS in physics, chemistry, and biology. The discussion ends with a critical assessment of the CISS field and some comments on its future outlook.

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Chirality‐Induced Magnet‐Free Spin Generation in a Semiconductor

Liu,

Adhikari,

Wang

et al. 2024

Advanced Materials

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Electrical generation and transduction of polarized electron spins in semiconductors are of central interest in spintronics and quantum information science. While spin generation in semiconductors has been frequently realized via electrical injection from a ferromagnet, there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality‐induced spin selectivity (CISS), we demonstrate efficient creation of spin accumulation in n‐doped GaAs via electric current injection from a normal metal (Au) electrode through a self‐assembled monolayer of chiral molecules (α‐helix L‐polyalanine, AHPA‐L). The resulting spin polarization is detected as a Hanle effect in the n‐GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality‐induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional semiconductor. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet‐free semiconductor spintronics.This article is protected by copyright. All rights reserved

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Direct comparison of three-terminal and four-terminal Hanle effects in the persistent photoconductor Al0.3Ga0.7As:Si

Cited by 3 publications

References 49 publications

Chiral‐Molecule‐Based Spintronic Devices

Chiral‐Molecule‐Based Spintronic Devices

Chiral Induced Spin Selectivity

Chirality‐Induced Magnet‐Free Spin Generation in a Semiconductor

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