Direct CMP on Porous Low-k Film for Damage-less Cu Integration

Kondo, Seiichi; Fukaya, K.; Ohashi, N.; Miyazaki, T.; Nagano, Hosei; Wada, Yukio; Ishibashi, Tadashi; Katô, Masahiko; Yoneda, Katsumi; Soda, E.; Nakao, Shin-ichi; Ishigami, Koichi; Kobayashi, N.

doi:10.1109/iitc.2006.1648677

Cited by 15 publications

(26 citation statements)

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“…In fact, studies using nonionic surfactant molecules with these length scales claim that such diffusion does not occur. [7][8][9] In this study, we demonstrate that nonionic surfactants can readily diffuse in strongly hydrophobic nanoporous glass film with d e 2.1 nm. The diffusivity was found sensitive to molecular weight, hydrophilic-lipophilic balance, and molecular structure of surfactants.…”

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confidence: 56%

“…In the case of ultralow dielectric constant nanoporous films, molecular-assisted diffusion of such CMP slurries into the films can have dramatic effects on the resulting dielectric constant. [7][8][9]21,22 The behavior of surfactant molecules in these films is not well understood and the lack of the knowledge has generated the misconception that surfactants do not penetrate the films but adsorb on the film surface and simply assist water diffusion into the pores. [7][8][9] A wide range of nonionic surfactants including monomeric (linear bridged) polyoxyethylene alkyl ethers and dimeric (branched) gemini surfactants were selected for study ( Figure 1).…”

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confidence: 99%

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Surfactant Mobility in Nanoporous Glass Films

et al. 2009

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Polymer molecules when physically confined at nanometer length scales diffuse nonclassically and very differently depending on their molecular weight and the nature of the confinement. Long polymers that exhibit "snakelike" reptation based mobility in melts may diffuse faster in confined nanometer sized cylinders with pore diameter d approximately 15 nm, and short polymers subject to Rouse dynamics have shown signatures of reptation and slower diffusion when confined in nanoporous glass with d approximately 4 nm. However, the mobility of short polymers with radii of gyration similar to a smaller pore diameter (d < or = 2.1 nm) but with extended lengths well larger than the pore diameter has not as yet been studied. In this work, we demonstrate that those short molecules including nonionic surfactants can readily diffuse in strongly hydrophobic nanoporous glasses film with d < or = 2.1 nm. The diffusivity was found sensitive to molecular weight, hydrophilic-lipophilic balance, and molecular structure of surfactants. Remarkably, analysis of the measured diffusion coefficients reveals that short-chain surfactants exhibit signature of reptation based diffusion in the nanoscopic pore confinements. Such reptation mobility in agreement with theoretical predictions is not even observed in reptating polymer melts due to fluctuations of the entanglement pathway. The fixed pathways in the interconnected nanoporous films provide ideal nanoscale environments to explore mobility of confined molecules, and the results have implications for a number of technologies where nanoporous materials are in contact with surfactant molecules.

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confidence: 56%

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confidence: 99%

Surfactant Mobility in Nanoporous Glass Films

et al. 2009

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“…As the k-value decreased, the particle count of porous SiOC films after direct CMP increased, and most of the particles were detected as watermarks [175] . Watermark generation is probably attributed to H 2 SiO 3 formation in water drops that remained on the hydrophobic SiOC surface during drying.…”

Section: Low K Materials Post Cu Cmp Cleaningmentioning

confidence: 99%

Challenges of 22 nm and beyond CMOS technology

Huang

Kang

et al. 2009

Sci. China Ser. F-Inf. Sci.

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It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new device architectures, high K/metal gate (HK/MG) stack and integration technology, mobility enhancement technologies, source/drain engineering and advanced copper interconnect technology with ultra-low-k process.

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“…The IMD SiCN Low-k Cu reliability reduction with direct CMP can be explained by the IMD degradation induced by the wet polishing and reveals the low interface properties between the IMD and the SICN dielectric capping. Some surfactants adsorption and water uptake [3,4] are expected to explain the IMD degradation. -Slurry chemistry effect…”

Section: Top Interface Sioch/sicnmentioning

confidence: 99%

“…The slurry selectivity and neutrality with respect to the material is highly required to preserve the dielectric integrity [4,5]. Two distinct slurries have been tested with a constant voltage stress.…”

Section: Top Interface Sioch/sicnmentioning

confidence: 99%