2010
DOI: 10.1007/s00216-009-3382-8
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Direct chemical in-depth profile analysis and thickness quantification of nanometer multilayers using pulsed-rf-GD-TOFMS

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Cited by 24 publications
(11 citation statements)
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“…The GDOES spectra of the Ag:HAp-PDMS composite layer, presented in Figure 4 , indicate that the Si, O, C, H (atoms specific to a PDMS layer) [ 66 ], P, Ca, Ag, and O (atoms specific to a Ag:HAp layer) [ 67 ] depth profile curves have similar temporal behavior [ 34 ]. There is not any sharp increasing or decreasing in their depth profile curves as in the case of multilayer analysis [ 68 ]. Therefore, in correlation with the SEM and XPS analysis, the GD results indicate that during the thermal deposition process the Ag:HAp particles interact with the PDMS layer previously deposited on the silicon substrate determining the formation of a composite material.…”
Section: Resultsmentioning
confidence: 99%
“…The GDOES spectra of the Ag:HAp-PDMS composite layer, presented in Figure 4 , indicate that the Si, O, C, H (atoms specific to a PDMS layer) [ 66 ], P, Ca, Ag, and O (atoms specific to a Ag:HAp layer) [ 67 ] depth profile curves have similar temporal behavior [ 34 ]. There is not any sharp increasing or decreasing in their depth profile curves as in the case of multilayer analysis [ 68 ]. Therefore, in correlation with the SEM and XPS analysis, the GD results indicate that during the thermal deposition process the Ag:HAp particles interact with the PDMS layer previously deposited on the silicon substrate determining the formation of a composite material.…”
Section: Resultsmentioning
confidence: 99%
“…Combining FAPA with a femtosecond laser may improve control of the LA process. Valledor et al performed depth profiling of thin metal films with nanometer depth resolution using pulsed-RF glow discharge TOF MS (RF-GD-TOFMS) [169]. In this technique, RF power generates plasma in argon, which sputters atoms and molecules from a surface.…”
Section: Depth Profilingmentioning
confidence: 99%
“…Analytical glow discharge (GD) optical emission spectrometry (OES) is a technique widely used for rapid compositional depth profiling of thin films and coated materials. 1,2 It has certain advantages for the direct analysis of solid samples due to its simplicity, rapid processing, low cost and high resolution compositional depth profiling compared with the competing techniques, such as Secondary Ion Mass Spectrometry (SIMS), 3 Laser Ablation Inductively Coupled Plasma Mass Spectrometry (LA-ICP-MS), 4 Auger Electron Spectroscopy (AES) 5 and Glow Discharge Mass Spectrometry (GD-MS), 6 used for surface analysis. Though initially the use of a direct current (dc) discharge restricted GD-OES to conducting materials, the use of radio frequency (rf) discharges allowed the technique to be applied to non-conducting samples such as ceramics, glass, paint layers and oxide materials.…”
Section: Introductionmentioning
confidence: 99%