2015
DOI: 10.1063/1.4916817
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Direct band-gap measurement on epitaxial Co2FeAl0.5Si0.5 Heusler-alloy films

Abstract: In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co2FeAl0.5Si0.5 (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.

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Cited by 5 publications
(2 citation statements)
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“…Apart from determination of the spin polarisation, it also shows the structural ordering of RuFeCrSi depends on the Fe and Ru content. For 0.1 ≤ x < 1.8, the L 2 1 ordering is confirmed, whilst for x = 1.8, the crystalline structure becomes B 2 [ 200 , 201 ]. The spin polarisation of x = 1.5 and 1.7 is measured to be P = 53 and 52%, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Apart from determination of the spin polarisation, it also shows the structural ordering of RuFeCrSi depends on the Fe and Ru content. For 0.1 ≤ x < 1.8, the L 2 1 ordering is confirmed, whilst for x = 1.8, the crystalline structure becomes B 2 [ 200 , 201 ]. The spin polarisation of x = 1.5 and 1.7 is measured to be P = 53 and 52%, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…However, changes in surface roughness, band gap, saturation magnetization, and Gilbert damping constant etc. are found in the Heusler alloys after thermal treatment [15][16][17][18]. Interdiffusion or phase separation may happen during the annealing at high temperatures, which reduces TMR ratio of MTJs [18,19].…”
Section: Introductionmentioning
confidence: 97%