Direct Au–Au bonding technology for high performance GaAs/AlGaAs quantum cascade lasers

Abstract

In this paper we investigate chip bonding technology of GaAs/AlGaAs quantum cascade lasers (QCLs). Its results have strong influence on final performance of devices and are essential for achieving room temperature operation. Various solders were investigated and compared in terms of their thermal resistance and induced stress. The spatially resolved photoluminescence technique has been applied for a device thermal analysis. The soldering quality was also investigated by means of a scanning acoustic microscopy. The particular attention has been paid to Au-Au die bonding, which seems to be a promising alternative to the choice between hard and soft solder bonding of GaAs/AlGaAs QCLs operating from cryogenic temperatures up to room temperatures. A good quality direct Au-Au bonding was achieved for bonding parameters comparable with the ones typical for AuSn eutectic bonding process. High performance room temperature operation of GaAs/AlGaAs QCLs has been achieved with the state-of-the-art parameters.

Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers

“…The structures grown were processed into double trench Fabry–Perot lasers using standard processing technology [31,32]. For the isolation layer, Si 3 N 4 was used.…”

Field distribution in waveguide of mid-infrared strain-compensated InAlAs/InGaAs/InP quantum cascade laser

“…The power distribution of the laser beam in the far field was measured in room temperature by using a goniometric profiler (Pruszyńska- Karbownik et al 2013Karbownik et al , 2015. The laser was supplied with 100 ns pulses, frequency of 500 Hz, and current of 1.2 times threshold.…”

“…The double trench deep mesa was fabricated using wet etching and Si 3 N 4 for electrical insulation. Detailed information about the laser fabrication technology can be found in Bugajski et al (2014) and Karbownik et al (2015).…”

A novel method to calculate a near field of widely divergent laser beams

“…InGaAs/InP laser has an active region made of InGaAs and InAlAs lattice matched to InP substrate. Detailed information about the technology can be found in Kosiel et al (2009), Karbownik et al (2014), Bugajski et al (2014). All measurements were provided by using a goniometric profilometer (Pruszyńska- Karbownik et al 2013).…”