Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

Aarts, Imp Igor; Hoex, Bram; Smets, Ahm Arno; Engeln, Rah Richard; Kessels, Wmm Erwin; Sanden, van de Mcm Richard

doi:10.1063/1.1713047

Cited by 36 publications

(18 citation statements)

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“…The mechanisms of CF 2 production and destruction in fluorocarbon reactive ionetching processes have been investigated using techniques such as laser induced fluorescence, [11] broad-band UV absorption spectroscopy, [12,13] infrared diode laser spectroscopy [14,15] and cavity-ring down spectroscopy. [16] It has been found that the primary mechanism for CF x production (where x = 1, 2 and 3) is neutralisation and fragmentation of CF x + (x = 1-4) ions incident on the powered electrode and not direct electron-impact induced fragmentation of the feedstock gas. [17] In order to understand, model and ultimately control plasmas, spectroscopic methods such as those listed above are needed to monitor reactive intermediates in plasmas, and rate-constant measurements and reaction enthalpy determinations are required for relevant reactions involving CF 2 and CF 2 + .…”

Section: Introductionmentioning

confidence: 99%

Difluorocarbene Studied with Threshold Photoelectron Spectroscopy (TPES): Measurement of the First Adiabatic Ionization Energy (AIE) of CF₂

Innocenti¹,

Eypper²,

Lee³

et al. 2008

Chemistry A European J

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The first photoelectron band of difluorocarbene CF(2), has been studied by threshold photoelectron (TPE) spectroscopy. CF(2) was prepared by microwave discharge of a flowing mixture of hexafluoropropene, C(3)F(6), and argon. A vibrationally resolved band was observed in which at least twenty-two components were observed. In the first PE band of CF(2), the adiabatic ionization energy differs significantly from the vertical ionization energy because, for the ionization CF(2) (+) (X(2)A(1))+e(-) <-- CF(2) (X(1)A(1)), there is an increase in the FCF bond angle (by approximately 20 degrees ) and a decrease in the C--F bond length (by approximately 0.7 A). The adiabatic component was not observed in the experimental TPE spectrum. However, on comparing this spectrum with an ab initio/Franck-Condon simulation of this band, using results from high-level ab initio calculations, the structure associated with the vibrational components could be assigned. This led to alignment of the experimental TPE spectrum and the computed Franck-Condon envelope, and a determination of the first adiabatic ionization energy of CF(2) as (11.362+/-0.005) eV. From the assignment of the vibrational structure, values were obtained for the harmonic and fundamental frequencies of the symmetric stretching mode (nu(1)') and symmetric bending mode (nu(2)') in CF(2) (+) (X(2)A(1)).

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Section: Introductionmentioning

confidence: 99%

Difluorocarbene Studied with Threshold Photoelectron Spectroscopy (TPES): Measurement of the First Adiabatic Ionization Energy (AIE) of CF₂

Innocenti¹,

Eypper²,

Lee³

et al. 2008

Chemistry A European J

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“…Subgap absorption spectra of a-Si:H thin films have been measured using the novel tf-CRDS absorption technique introduced by Engeln et al [6], further developed for a-Si:H by Smets et al [7], and recently extended to spectroscopic measurements using a tunable laser source [8]. The technique gives absolute values of a over a broad spectral range with a minimal absorption sensitivity of 10 À8 per single pass without the need for a calibration procedure.…”

Section: Methodsmentioning

confidence: 99%

Analysis of a-Si:H subgap absorption spectra obtained from absolute cavity ringdown absorption spectroscopy using an empirical DOS model

Aarts

Sanden

Kessels

2004

Journal of Non-Crystalline Solids

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“…This technique can be applied for H-depth profiling and to determine the H surface coverage of a-Si:H [3,9]. The same optical port will also be used in future studies in which dangling bonds will be probed at subgap energies by applying the evanescent-wave cavity ringdown technique [10,11]. Dangling bonds will also be studied from the front side of the substrate (35º port) using the surface-specific technique of second harmonic generation (SHG) [12].…”

Section: Methodsmentioning

confidence: 99%

“…The same optical port will also be used in future studies in which dangling bonds will be probed at subgap energies by applying the evanescent-wave cavity ringdown technique [10,11]. Dangling bonds will also be studied from the front side of the substrate (35º port) using the surface-specific technique of second harmonic generation (SHG) [12]. Furthermore, gas phase absorption spectroscopy can be applied in front of the substrate and a residual gas analyzer can be used for thermal-programmed desorption studies.…”

Section: Methodsmentioning

confidence: 99%

New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

et al. 2004

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• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. Link to publication• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTA new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.

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Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

Cited by 36 publications

References 13 publications

Difluorocarbene Studied with Threshold Photoelectron Spectroscopy (TPES): Measurement of the First Adiabatic Ionization Energy (AIE) of CF₂

Difluorocarbene Studied with Threshold Photoelectron Spectroscopy (TPES): Measurement of the First Adiabatic Ionization Energy (AIE) of CF₂

Analysis of a-Si:H subgap absorption spectra obtained from absolute cavity ringdown absorption spectroscopy using an empirical DOS model

New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

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Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

Cited by 36 publications

References 13 publications

Difluorocarbene Studied with Threshold Photoelectron Spectroscopy (TPES): Measurement of the First Adiabatic Ionization Energy (AIE) of CF2

Difluorocarbene Studied with Threshold Photoelectron Spectroscopy (TPES): Measurement of the First Adiabatic Ionization Energy (AIE) of CF2

Analysis of a-Si:H subgap absorption spectra obtained from absolute cavity ringdown absorption spectroscopy using an empirical DOS model

New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

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Difluorocarbene Studied with Threshold Photoelectron Spectroscopy (TPES): Measurement of the First Adiabatic Ionization Energy (AIE) of CF₂

Difluorocarbene Studied with Threshold Photoelectron Spectroscopy (TPES): Measurement of the First Adiabatic Ionization Energy (AIE) of CF₂