Dirac model of electronic transport in graphene antidot barriers

Thomsen, Morten Rishøj; Brun, Søren Jacob; Pedersen, Thomas Garm

doi:10.1088/0953-8984/26/33/335301

Cited by 21 publications

(21 citation statements)

References 46 publications

(78 reference statements)

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“…The study of graphene QAD [27][28][29][30][31][32][33] and QD [34][35][36][37][38][39] systems was addressed several times predicting possible experimental applications. The physical properties of silicene based nanostructures are even more complex, since the SOI induced band gap can be controlled via several experimentally realistic methods.…”

Section: 25mentioning

confidence: 99%

Protected edge states in silicene antidots and dots in magnetic field

et al. 2015

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Silicene systems, due to the buckled structure of the lattice, manifest remarkable intrinsic spinorbit interaction triggering a topological phase transition in the low-energy regime. Thus, we found that protected edge states are present in silicene antidots and dots, being polarized in valley-spin pairs. We have also studied the effect of the lattice termination on the properties of the single electron energy levels and electron density distribution of silicene antidots and dots situated in a perpendicular magnetic field. Our calculations confirmed that the topological edge states are propagating over the perimeter of the antidot/dot for both ideal or realistic edge termination containing roughness on the atomic length scale. The valley polarization and the slope of the energy line as a function of the magnetic field is, however, reduced when the antidot or dot has a rough edge.

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Section: 25mentioning

confidence: 99%

Protected edge states in silicene antidots and dots in magnetic field

et al. 2015

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“…This approach relies on the fact that carriers in graphene behave as massless Dirac particles as long as the energy is close to the so-called Dirac point of the graphene band structure. We have previously successfully applied this approach to study a range of graphene nanostructures such as antidot lattices [27] and isolated rings, dots, and antidots [22,28].…”

Section: Introductionmentioning

confidence: 99%

Stark effect and polarizability of graphene quantum dots

Pedersen¹

2017

Phys. Rev. B

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The properties of graphene quantum dots can be manipulated via lateral electric fields. Treating electrons in such structures as confined massless Dirac fermions, we derive an analytical expression for the quadratic Stark shift valid for arbitrary angular momentum and quantum dot size. Moreover, we determine the perturbative regime, beyond which higher-order field effects are observed. The Dirac approach is validated by comparison with atomistic tight-binding simulations. Finally, we study the influence on the Stark effect of band gaps produced by, e.g., interaction with the substrate.

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“…In our transport calculations, we use the Landauer-Büttiker formalism with a tight-binding model, which is widely used for calculating the quantum transport in nanoscale devices [31][32][33][34][35][36][37][38][39]. The magnetic field is included in the Hamiltonian by a Peierls substitution.…”

Section: Introductionmentioning

confidence: 99%

Magnetic edge states and magnetotransport in graphene antidot barriers

et al. 2016

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Magnetic fields are often used for characterizing transport in nanoscale materials. Recent magnetotransport experiments have demonstrated that ballistic transport is possible in graphene antidot lattices (GALs). These experiments have inspired the present theoretical study of GALs in a perpendicular magnetic field. We calculate magnetotransport through graphene antidot barriers (GABs), which are finite rows of antidots arranged periodically in a pristine graphene sheet, using a tightbinding model and the Landauer-Büttiker formula. We show that GABs behave as ideal Dirac mass barriers for antidots smaller than the magnetic length, and demonstrate the presence of magnetic edge states, which are localized states on the periphery of the antidots due to successive reflections on the antidot edge in the presence of a magnetic field. We show that these states are robust against variations in lattice configuration and antidot edge chirality. Moreover, we calculate the transmittance of disordered GABs and find that magnetic edge states survive a moderate degree of disorder. Due to the long phase-coherence length in graphene and the robustness of these states, we expect magnetic edge states to be observable in experiments as well.

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Dirac model of electronic transport in graphene antidot barriers

Cited by 21 publications

References 46 publications

Protected edge states in silicene antidots and dots in magnetic field

Protected edge states in silicene antidots and dots in magnetic field

Stark effect and polarizability of graphene quantum dots

Magnetic edge states and magnetotransport in graphene antidot barriers

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