Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices

Suchalkin, S.; Ermolaev, M. M.; Valla, T.; Kipshidze, G.; Smirnov, Dmitry; Moon, Seungbin; Ozerov, Mykhaylo; Jiang, Zhigang; Jiang, Yuxuan; Svensson, Stefan P.; Sarney, Wendy L.; Belenky, Gregory

doi:10.1063/1.5128634

Cited by 6 publications

(2 citation statements)

References 28 publications

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“…However, spontaneous ordering in InAsSb is difficult to control, and the maximum size of spontaneously ordered domains is reported to be only about 100 nm 20 . Instead, we employ the engineered ordering based on the VS molecular-beam epitaxy (MBE) technique 14 , which enables the synthesis of high-quality crystalline materials with a tunable band structure 19 , 21 , 22 . The VS technique can also accommodate a large lattice constant mismatch between the semiconductor structure and the (physical) substrate, resulting in intriguing electronic states that otherwise are inconceivable with the conventional pseudomorphic growth.…”

Section: Introductionmentioning

confidence: 99%

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

et al. 2022

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Realizing a large Landé g-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of g ≈ 104, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the g-factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward g-factor engineering in semiconductor structures.

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Section: Introductionmentioning

confidence: 99%

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

et al. 2022

Self Cite

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show abstract

“…However, spontaneous ordering in InAsSb is difficult to control, and the maximum size of spontaneously ordered domains is reported to be only about 100 nm [20]. Instead, we employ the engineered ordering based on the VS molecular-beam epitaxy (MBE) technique [14], which enables the synthesis of high-quality crystalline materials with a tunable band structure [19,21,22].…”

mentioning

confidence: 99%

Giant $g$-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Jiang,

Ermolaev,

Kipshidze

et al. 2022

Preprint

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Realizing a large Landé g-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of g ≈ 104, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the g-factor can be tuned on demand from 30 to 110 via varying the SL period. The key ingredients of a large g-factor include the size of the band gap and the wavefunction overlap between the spatially separated electron and hole states, where the latter has drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward g-factor engineering in semiconductor structures.

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Perspective on advances in InAsSb type II superlattices grown on virtual substrates

Belenky

Suchalkin

Svensson

et al. 2020

Applied Physics Letters

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Metamorphic InAs1−xSbx/InAs1−ySby strained layer superlattice (SLS) structures allow for great flexibility of engineering artificial band structures and, therefore, the design of new optical and electrical properties. By using tailored virtual substrates, the average lattice constant of the SLS can be chosen anywhere between 0.606 nm (InAs) and 0.648 nm (InSb), which allows for flexibility in the choice of compositions and thicknesses of the constituent layers. These parameters can then be tuned in a wide range, which is not possible when using binary substrates. Specifically, the layer thicknesses can be nearly arbitrarily small. Short period InAs1−xSbx/InAs1−ySby SLSs exhibit strong optical absorption and improved perpendicular carrier transport and can demonstrate Dirac-type carrier dispersion, a large g-factor, and deep band inversion. The prospects for the development of devices based on these structures are discussed.

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Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices

Cited by 6 publications

References 28 publications

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Giant $g$-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Perspective on advances in InAsSb type II superlattices grown on virtual substrates

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