2009
DOI: 10.1063/1.3117513
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Dipole induced anomalous S-shape I-V curves in polymer solar cells

Abstract: A kink is sometimes seen in the I-V curves for organic solar cells. In literature charge blocking has been speculated to be responsible for such kind of anomalous features. In this manuscript, we use poly(3-hexylthiophene):[6, 6]-phenyl-C61-butyric acid methyl ester as our model polymer system and investigate different device structures using ultraviolet photoelectron spectroscopy as our primary tool to investigate the reason for this S-shaped kink. We attribute this anomalous feature to the presence of strong… Show more

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Cited by 232 publications
(173 citation statements)
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“…The result of the study was to show that a Df across the interface caused a degradation of the device efficiency and formation of an "S-shaped" current density-voltage (J-V) curve. 19,20 The Df is compensated by charge transfer across the interface, creating a second diode in the opposite direction to the intended device. 20 When a forward bias is applied sufficient to overcome the Df, normal diode behavior resumes.…”
Section: Numerous Organicmentioning
confidence: 99%
See 1 more Smart Citation
“…The result of the study was to show that a Df across the interface caused a degradation of the device efficiency and formation of an "S-shaped" current density-voltage (J-V) curve. 19,20 The Df is compensated by charge transfer across the interface, creating a second diode in the opposite direction to the intended device. 20 When a forward bias is applied sufficient to overcome the Df, normal diode behavior resumes.…”
Section: Numerous Organicmentioning
confidence: 99%
“…19,20 The Df is compensated by charge transfer across the interface, creating a second diode in the opposite direction to the intended device. 20 When a forward bias is applied sufficient to overcome the Df, normal diode behavior resumes.…”
Section: Numerous Organicmentioning
confidence: 99%
“…Indeed, the latter would lead to PCBM accumulation near the device anode and thereby introduce a hole collection barrier and/or interfacial dipoles. [44] The barrier amplitude would depend on the PCBM volume fraction and vary with light intensity (through photo-inducted appearance of negatively charged fullerenes). Almost absent during the ICPE measurements (low intensity light), the barrier is expected to inhibit device operation under AM1.5 illumination (high intensity light).…”
mentioning
confidence: 99%
“…During the fabrication of so many devices we found 507 three issues that were likely to reduce device quality (without changing substrates 508 or metal type): 509 1. Occasionally, there is a PEDOT:PSS batch supplied that produces exclusively 510 S-shaped J/V curves with low FF [119,120] This problem could only be solved 511 by ordering new PEDOT:PSS and is attributed to slight changes in the doping 512 level of the PEDOT:PSS itself. 513 2.…”
mentioning
confidence: 99%