Dip-Pen Nanolithography of Electrical Contacts to Single-Walled Carbon Nanotubes

Wang, Wechung Maria; LeMieux, Melburne C.; Selvarasah, Selvapraba; Dokmeci, Mehmet R.; Bao, Zhenan

doi:10.1021/nn900984w

Cited by 35 publications

(46 citation statements)

References 76 publications

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“…The protocol however suffers from the large number of steps necessary to realize a basic plasmonic unit and the equipment required to fabricate and characterize the circuitry. Alternatively, direct dip-pen lithography can also be utilized to realize the electrodes mitigating the need for prepatterning and the subsequent alignment steps 21 . Prealignment of the nanowires in well-defined positions would greatly reduce the fabrication time.…”

Section: Discussionmentioning

confidence: 99%

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Song

Stolz

Zhang

et al. 2013

JoVE

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Plasmonics is an emerging technology capable of simultaneously transporting a plasmonic signal and an electronic signal on the same information support 1,2,3 . In this context, metal nanowires are especially desirable for realizing dense routing networks 4 . A prerequisite to operate such shared nanowire-based platform relies on our ability to electrically contact individual metal nanowires and efficiently excite surface plasmon polaritons 5 in this information support. In this article, we describe a protocol to bring electrical terminals to chemically-synthesized silver nanowires 6 randomly distributed on a glass substrate 7. The positions of the nanowire ends with respect to predefined landmarks are precisely located using standard optical transmission microscopy before encapsulation in an electron-sensitive resist. Trenches representing the electrode layout are subsequently designed by electron-beam lithography. Metal electrodes are then fabricated by thermally evaporating a Cr/Au layer followed by a chemical lift-off. The contacted silver nanowires are finally transferred to a leakage radiation microscope for surface plasmon excitation and characterization 8,9 . Surface plasmons are launched in the nanowires by focusing a near infrared laser beam on a diffraction-limited spot overlapping one nanowire extremity 5,9 . For sufficiently large nanowires, the surface plasmon mode leaks into the glass substrate 9,10 . This leakage radiation is readily detected, imaged, and analyzed in the different conjugate planes in leakage radiation microscopy 9,11 . The electrical terminals do not affect the plasmon propagation. However, a current-induced morphological deterioration of the nanowire drastically degrades the flow of surface plasmons. The combination of surface plasmon leakage radiation microscopy with a simultaneous analysis of the nanowire electrical transport characteristics reveals the intrinsic limitations of such plasmonic circuitry. Video LinkThe video component of this article can be found at

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Section: Discussionmentioning

confidence: 99%

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Song

Stolz

Zhang

et al. 2013

JoVE

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“…25 These results are significantly improved over those from the best solution-processed nanotube transistors reported to date. 16,17,19,20,33 Furthermore, Figure 4d shows how L G scaling affects the low-field slope and saturation current. Note how similar the curves are for 15 and 45 nm L G devices, indicating that at low fields, scattering in the channel plays a minor role in device performance.…”

mentioning

confidence: 99%

Short-Channel Transistors Constructed with Solution-Processed Carbon Nanotubes

et al. 2012

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We develop short-channel transistors using solutionprocessed single-walled carbon nanotubes (SWNTs) to evaluate the feasibility of those SWNTs for high-performance applications. Our results show that even though the intrinsic field-effect mobility is lower than the mobility of CVD nanotubes, the electrical contact between the nanotube and metal electrodes is not significantly affected. It is this contact resistance which often limits the performance of ultrascaled transistors. Moreover, we found that the contact resistance is lowered by the introduction of oxygen treatment. Therefore, high-performance solution-processed nanotube transistors with a 15 nm channel length were obtained by combining a top-gate structure and gate insulators made of a high-dielectric-constant ZrO 2 film. The combination of these elements yields a performance comparable to that obtained with CVD nanotube transistors, which indicates the potential for using solution-processed SWNTs for future aggressively scaled transistor technology.

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“…Although it is well-known that Pd makes excellent contact with CVD grown large diameter CNTs, [33] however, our results need to be interpreted in the context that we are dealing with solution processed DEP assembled devices. From the study of solution processed individual CNT transistors it was found that the mobility for individual s-CNT typically varies from 10-1000 cm 2 /Vs, [32,[34][35][36] which is significantly lower than the CVD tubes where the typical mobilities are above 1000 cm 2 /Vs. [37,38] The inferior performance of the solution processed devices has been attributed to high contact resistance between the CNTs and metal contact as well as defects in the CNTs.…”

Section: Resultsmentioning

confidence: 98%

High performance semiconducting enriched carbon nanotube thin film transistors using metallic carbon nanotubes as electrodes

2014

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High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (mCNTs) as source and drain electrodes, and aligned arrays of semiconducting enriched CNTs (s-CNTs) as channel material. The electrical transport measurements at room temperature show that the m-CNT contacted s-CNT array devices with a 2 µm channel length perform superiorly to those of control Pd contacted s-CNT devices. The m-CNT contacted devices exhibit a maximum (average) on-conductance of 36.5 µS (19.2 µS), transconductance of 2.6 µS (1.2 µS), mobility of 51 cm 2 /Vs (25 cm 2 /Vs), and current onoff ratio of 1.1×10 6 (2.5×10 5 ). These values are almost an order of magnitude higher than that of control Pd contacted devices with the same channel length and s-CNT linear density. The low temperature charge transport measurements suggest that these improved performances are due to the lower charge injection barrier of m-CNT/s-CNT array devices compared to Pd/s-CNT array devices. We attribute the lower injection barrier to unique geometry of our devices. In addition to using semiconducting enriched CNT, our results suggest that using metallic CNT as an electrode can significantly enhance the performance of CNT TFTs.

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Dip-Pen Nanolithography of Electrical Contacts to Single-Walled Carbon Nanotubes

Cited by 35 publications

References 76 publications

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Short-Channel Transistors Constructed with Solution-Processed Carbon Nanotubes

High performance semiconducting enriched carbon nanotube thin film transistors using metallic carbon nanotubes as electrodes

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