2010
DOI: 10.1007/s00340-010-4195-3
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Diode pumped Ho:YAG and Ho:LuAG lasers, Q-switching and second harmonic generation

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Cited by 37 publications
(20 citation statements)
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“…Barnes et al published a Q-switched Ho:YAG laser pumped by a pulsed InGaAs laser diode that was wavelength stabilized at 1.86 μm and cooled to 5°C [10]. Barnes et al published a Q-switched Ho:YAG laser pumped by a pulsed InGaAs laser diode that was wavelength stabilized at 1.86 μm and cooled to 5°C [10].…”
mentioning
confidence: 99%
“…Barnes et al published a Q-switched Ho:YAG laser pumped by a pulsed InGaAs laser diode that was wavelength stabilized at 1.86 μm and cooled to 5°C [10]. Barnes et al published a Q-switched Ho:YAG laser pumped by a pulsed InGaAs laser diode that was wavelength stabilized at 1.86 μm and cooled to 5°C [10].…”
mentioning
confidence: 99%
“…Stark splitting in the lower laser manifold of Ho:LuAG ( 5 I 8 ) is relatively larger than that in YAG and YLF, resulting in a low thermal occupation for the lower laser level and hence a reduced lasing threshold at room temperature [10]. Moreover, Ho:LuAG has low upconversion rates and a long upper laser level lifetime that favoring efficient Qswitched operation [11][12][13]. …”
Section: Introductionmentioning
confidence: 97%
“…As a result, Ho:LuAG is a potential high‐power eye‐safe laser material. In recent years, some studies on the Ho:LuAG single crystals have been carried out . LuAG crystals can be grown by means of the Czochralski or micro‐pulling‐down (μ‐PD) methods.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, some studies on the Ho:LuAG single crystals have been carried out. [12][13][14][15][16][17][18] LuAG crystals can be grown by means of the Czochralski 19,20 or micro-pulling-down (l-PD) 21,22 methods. However, the former needs extremely high temperatures and long preparation periods and the latter is unsuitable to fabricate crystals with large sizes.…”
Section: Introductionmentioning
confidence: 99%