1997
DOI: 10.1109/3.554905
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Diode-pumped Ho:Tm:LuLiF/sub 4/ laser at room temperature

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Cited by 45 publications
(17 citation statements)
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“…Tm:Ho doped LuAG and LuLF were developed at NASA Langley Research Center as potential 2 mm laser materials [7,8] using a quantum mechanical model. Lasing at 2:1 mm in Tm:Ho:LuAG and 2:06 mm in Tm:Ho:LuLF were also demonstrated [5,6] at NASA Langley Research Center, and as previously stated, showed improved performance over Tm:Ho doped YAG and YLF, respectively. The reason for this is that the lower laser level is in the ground manifold, making its exact position critical to the laser threshold.…”
Section: Introductionsupporting
confidence: 56%
See 1 more Smart Citation
“…Tm:Ho doped LuAG and LuLF were developed at NASA Langley Research Center as potential 2 mm laser materials [7,8] using a quantum mechanical model. Lasing at 2:1 mm in Tm:Ho:LuAG and 2:06 mm in Tm:Ho:LuLF were also demonstrated [5,6] at NASA Langley Research Center, and as previously stated, showed improved performance over Tm:Ho doped YAG and YLF, respectively. The reason for this is that the lower laser level is in the ground manifold, making its exact position critical to the laser threshold.…”
Section: Introductionsupporting
confidence: 56%
“…However, higher 2 mm laser efficiency has been observed in Tm:Ho doped Lu 3 Al 5 O 12 (LuAG) [5] and LuLiF 4 (LuLF) [6]. Tm:Ho doped LuAG and LuLF were developed at NASA Langley Research Center as potential 2 mm laser materials [7,8] using a quantum mechanical model.…”
Section: Introductionmentioning
confidence: 99%
“…Performance of these laser materials under nearly identical experimen- tal conditions [44] agreed with model predictions, shown in Fig. 8.…”
Section: Quantum Mechanicssupporting
confidence: 73%
“…Table 1), which is beneficial to up-conversion lasers. Rare-earth-doped LiLuF 4 exhibits a larger splitting of the manifolds by the crystal field as compared to LiYF 4 and LiGdF 4 , which tends to produce more favorable thermal occupation factors of both the upper and lower laser levels [12,13]. Another advantage of LiLuF 4 is the congruent melting behavior.…”
Section: Er 3þ :Lilufmentioning
confidence: 95%