We propose a vanadate crystal-based composite gain medium consisting of Tm 3+ and Ho 3+ ion-doped sections, which facilitates the direct use of common 800 nm diode lasers for a miniature 2.1 μm laser oscillator, owing to the large absorption cross sections and broad absorption bands of the rare earth iondoped vanadate crystals. Moreover, due to heat transfer and the released thermal stress at the interface between the boned Tm:YVO 4 and Ho:YVO 4 sections, significant improvement in the thermal effects of the gain structure is realized, and an efficient Ho laser with a power of 3.62 W at 2053.13 nm is obtained, corresponding to a slope efficiency of 28.6%. To the best of our knowledge, this is the maximum room-temperature power of common diode-pumped vanadate gain media with a wavelength of above 2 μm.