Diode Parameters of Heterojunctions Comprising <i>p</i>-Type Ultrananocrystalline Diamond Films and <i>n</i>-Type Si Substrates

Chaleawpong, Rawiwan; Promros, Nathaporn; Charoenyuenyao, Peerasil; Hanada, Takanori; Ohmagari, Shinya; Zkria, Abdelrahman; Yoshitake, Tsuyoshi

doi:10.1166/jnn.2019.16232

Cited by 4 publications

(2 citation statements)

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“…As it is seen the ideality factor,

increases with decreasing temperature, while the reverse saturation current decreases. It is generally assumed that if the

is equal to one, the carriers freely cross the junction using the thermal diffusion process [ 26 ]. However, at a lower temperature, the process can be disturbed by the stronger localization effect on the defects, and this is reflected by the

rise.…”

Section: Resultsmentioning

confidence: 99%

The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces

et al. 2022

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In this work, the electrical parameters of the polycrystalline diamonds’ p-PCD/n-Si heterojunction were investigated using temperature-dependent current–voltage (I-V) characteristics. In the temperature range of 80–280 K, the ideality factor (n) and energy barrier height (φb) were found to be strongly temperature dependent. The φb increases with temperature rise, while the n value decreases. The observed dependencies are due to imperfections at the interface region of a heterojunction and the non-homogeneous distribution of the potential barrier heights. Values of the φb were calculated from I-V characteristics using the thermionic emission theory (TE). The plot of φb versus 1/2 kT revealed two distinct linear regions with different slopes in temperature regions of 80–170 K and 170–280 K. This indicates the existence of a double Gaussian distribution (DGD) in heterojunctions. Parameters such as mean barrier heights φ¯b and standard deviations σ were obtained from the plots linearization and read out from intercepts and slopes. They take values φ¯b = 1.06 eV, σ = 0.43 eV, respectively. The modified Richardson plot is drawn to show the linear behavior in these two temperature ranges, disclosing different values of the effective Richardson constants (A*).

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“…As it is seen the ideality factor,

increases with decreasing temperature, while the reverse saturation current decreases. It is generally assumed that if the

rise.…”

Section: Resultsmentioning

confidence: 99%

The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces

et al. 2022

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“…Finally, at a low-temperature range, the magnification effect takes place again. To describe changes in the

characteristic in the forward configuration, we propose a new approach that differs from the one commonly used in the literature [ 36 , 37 ]. In the whole voltage range, the

can be designated by the following formula:

where G —conductance, U —biasing voltage; A —magnification factor;

represents probability, with:

—distribution function and

—a point at which cumulative distribution function takes value of 0.5 and biasing voltage U is higher or equal to potential localizing charges in heterojunction area.…”

Section: Resultsmentioning

confidence: 99%

The n–Si/p–CVD Diamond Heterojunction

et al. 2020

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Due to the possible applications, materials with a wide energy gap are becoming objects of interest for researchers and engineers. In this context, the polycrystalline diamond layers grown by CVD methods on silicon substrates seem to be a promising material for engineering sensing devices. The proper tuning of the deposition parameters allows us to develop the diamond layers with varying crystallinity and defect structure, as was shown by SEM and Raman spectroscopy investigations. The cathodoluminescence (CL) spectroscopy revealed defects located just in the middle of the energy gap of diamonds. The current–voltage–temperature, I−V−T characteristics performed in a broad temperature range of 77–500 K yielded useful information about the electrical conduction in this interesting material. The recorded I−V−T in the forward configuration of the n–Si/p–CVD diamond heterojunction indicated hopping trough defects as the primary mechanism limiting conduction properties. The Ohmic character of the carriers flux permitting throughout heterojunction is intensified by charges released from the depletion layer. The magnification amplitude depends on both the defect density and the probability that biasing voltage is higher than the potential barrier binding the charge. In the present work, a simple model is proposed that describes I−V−T characteristics in a wide range of voltage, even where the current saturation effect occurs.

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