Diode-end-pumped passively Q-switched Nd:Y0.8Lu0.2VO4 laser with Cr4+:YAG crystal

Zhuang, Zhuo; Li, Shiguang; Li, Tao; Shan, Chunxia; Jiang, Jianmin; Zhao, Baozhen; Li, Jian; Chen, Jianzhong

doi:10.1016/j.optcom.2009.12.056

Cited by 21 publications

(8 citation statements)

References 18 publications

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“…High-energy, compact diode-pumped passively Q-switched (PQS) solid state lasers with subnanosecond pulses have a variety of applications such as nonlinear frequency conversion, industrial processing, and remote sensing. Since Cr 4+ :YAG crystals possess high damage thresholds and high optical and thermal stabilities, they have been extensively applied as saturable absorbers in PQS laser systems such as Nd 3+ -doped lasers [1][2][3] and Yb 3+ -doped lasers [4][5][6]. Comparing with Nd:YAG crystals, Yb:YAG crystals have longer fluorescence lifetimes [7], smaller emission cross sections [8], low quantum defects, and broad absorption bandwidths [8].…”

Section: Introductionmentioning

confidence: 99%

Performance enhancement of sub-nanosecond diode-pumped passively Q-switched Yb:YAG microchip laser with diamond surface cooling

Zhuang¹,

Chen²,

Su³

et al. 2012

Opt. Express

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We experimentally confirm that diamond surface cooling can significantly enhance the output performance of a sub-nanosecond diode-end-pumped passively Q-switched Yb:YAG laser. It is found that the pulse energy obtained with diamond cooling is approximately 1.5 times greater than that obtained without diamond cooling, where a Cr(4+):YAG absorber with the initial transmission of 84% is employed. Furthermore, the standard deviation of the pulse amplitude peak-to-peak fluctuation is found to be approximately 3 times lower than that measured without diamond cooling. Under a pump power of 3.9 W, the passively Q-switched Yb:YAG laser can generate a pulse train of 3.3 kHz repetition rate with a pulse energy of 287 μJ and with a pulse width of 650 ps.

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Section: Introductionmentioning

confidence: 99%

Performance enhancement of sub-nanosecond diode-pumped passively Q-switched Yb:YAG microchip laser with diamond surface cooling

Zhuang¹,

Chen²,

Su³

et al. 2012

Opt. Express

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“…In recent years, it is demonstrated that the two matrix mixed vanadate crystals, such as Nd:Y x Gd 1 -x VO 4 [1,2], Nd:Lu x Gd 1 -x VO 4 [3,4], and Nd:Lu x Y 1 -x VO 4 [5][6][7], are excellent candidates in the fields of Q switching and mode locking lasers. A 2.78 W average power with the shortest pulse width of 6.5 ns has been obtained from passively Q switched Nd:Gd 0.64 Y 0.36 VO 4 laser [1].…”

Section: Introductionmentioning

confidence: 99%

Crystal growth, spectroscopic characterization and laser performance of Nd:Lu0.33Y0.36Gd0.3VO4 crystal

et al. 2012

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A new three matrix mixed vanadate crystal Nd:Lu 0.33 Y 0.36 Gd 0.3 VO 4 (Nd:LuYGdVO 4 ) crystal was grown by the Czochralski method. Room temperature absorption and fluorescence spectra of the Nd:LuYGdVO 4 crystals were measured and the spectroscopic parameters were calculated by the Judd-Ofelt theory. The intensity parameters of the Nd:LuYGdVO 4 crystal were Ω 2 = 9.736 × 10 -20 cm 2 , Ω 4 = 4.179 × 10 ⎯20 cm 2 , Ω 6 = 8.020 × 10 -20 cm 2 and the stimulate emission cross section was 5.3 × 10 -19 cm 2 . Diode pumped actively Q switched and passively Q switched Nd:LuYGdVO 4 and Nd:Lu 0.14 Y 0.86 VO 4 lasers at 1.06 μm were demonstrated. The results indicate that, for both actively and passively Q switched lasers, the Nd:LuYGdVO 4 lasers can generate shorter pulse width with higher peak power than the Nd:Lu 0.14 Y 0.86 VO 4 lasers at the same cavity conditions.

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“…In order to improve the performance of Q switched laser, the double mixed Nd:Gd x Y 1 -x VO 4 , Nd:Lu x Gd 1 -x VO 4 , and Nd:Lu x Y 1 -x VO 4 crystals were successfully grown [11][12][13][14][15][16][17]. Due to the inhomoge neous broadening in the fluorescence spectra, these double mixed crystals has much broader fluorescence line width than the single vanadate crystals such as Nd:GdVO 4 , Nd:YVO 4 , and Nd:LuVO 4 [18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Actively Q-switched laser performance comparison between Nd:Lu0.15Y0.85VO4 and Nd:Lu0.33Y0.37Gd0.3VO4 mixed crystals

Zhao

et al. 2012

Laser Phys.

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By using acousto optic (AO) modulator as active Q switch, the diode pumped actively Q switched Nd:Lu 0.15 Y 0.85 VO 4 and Nd:Lu 0.33 Y 0.37 Gd 0.3 VO 4 lasers are realized. The average output power and the pulse width under different AO repetition rates are measured. The actively Q switched laser perfor mances for two kind mixed crystals are compared for the first time. The experimental results show that the actively Q switched Nd:Lu 0.33 Y 0.37 Gd 0.3 VO 4 laser can generate shorter pulse width with higher peak power in comparison with the actively Q switched Nd:Lu 0.15 Y 0.85 VO 4 laser. Due to broader fluorescence line width, the triple mixed crystal Nd:Lu 0.33 Y 0.37 Gd 0.3 VO 4 is a promising laser medium for shorter Q switched pulse with higher peak power.

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Diode-end-pumped passively Q-switched Nd:Y0.8Lu0.2VO4 laser with Cr4+:YAG crystal

Cited by 21 publications

References 18 publications

Performance enhancement of sub-nanosecond diode-pumped passively Q-switched Yb:YAG microchip laser with diamond surface cooling

Performance enhancement of sub-nanosecond diode-pumped passively Q-switched Yb:YAG microchip laser with diamond surface cooling

Crystal growth, spectroscopic characterization and laser performance of Nd:Lu0.33Y0.36Gd0.3VO4 crystal

Actively Q-switched laser performance comparison between Nd:Lu0.15Y0.85VO4 and Nd:Lu0.33Y0.37Gd0.3VO4 mixed crystals

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