Abstract:Epitaxial strain provides a powerful approach to manipulate physical properties of materials through rigid compression or extension of their chemical bonds via lattice-mismatch. Although symmetry-mismatch can lead to new physics by stabilizing novel interfacial structures, challenges in obtaining atomic-level structural information as well as lack of a suitable approach to separate it from the parasitical lattice-mismatch have limited the development of this field. Here, we present unambiguous experimental evi… Show more
“…The realization of lateral growth of 2D Sb 2 Se 3 along [010] requires to break this symmetry restriction, which is thermodynamically unfavorable. In analogy to classic lattice epitaxy in oxide or semiconductor heterostructures,34–36 in this work, we introduce a unique sodium‐mediated epitaxial growth strategy to promote 2D planar growth of Sb 2 Se 3 crystals, as schematically illustrated in Figure 1b. Briefly, high purity argon (Ar) is used as the carrier gas, the powder mixture of Sb 2 Se 3 and NaCl is employed as the precursor, and the freshly cleaved fluorophlogopite mica ([KMg 3 (AlSi 3 O 10 )F 2 ]) is chosen as the growth substrate, which is placed above on the powder mixture with the freshly cleaved side facing down (see Experimental Section for the details).…”
As an important member of group VA–VIA semiconductors, 2D Sb2Se3 has drawn widespread attention thanks to its outstanding optoelectronic properties as compared to the bulk material. However, due to the intrinsic chain‐like crystal structure, the controllable synthesis of ultrathin 2D planar Sb2Se3 nanostructures still remains a huge challenge. Herein, for the first time, the crystal structure limitation is overcome and the successful structural evolution of 2D ultrathin Sb2Se3 flakes (as thin as 1.3 nm), by introducing a sodium‐mediated chemical vapor deposition (CVD) growth method, is realized. The formation of 2D planar geometry is mainly attributed to the preferential growth of (010) plane with the lowest formation energy. The thickness‐dependent band structure of 2D Sb2Se3 flakes shows a wide absorption band from UV to NIR region (300–1000 nm), suggesting its potential application in broadband photodetection. Strikingly, the Sb2Se3 flakes–based photodetector demonstrates excellent performance such as broadband response varying from UV to NIR region, high responsivity of 4320 mA W−1, fast response time (τrise ≈ 13.16 ms and τdecay ≈ 9.61 ms), and strong anisotropic ratio of 2.5@ 532 nm, implying promising potential application in optoelectronics.
“…The realization of lateral growth of 2D Sb 2 Se 3 along [010] requires to break this symmetry restriction, which is thermodynamically unfavorable. In analogy to classic lattice epitaxy in oxide or semiconductor heterostructures,34–36 in this work, we introduce a unique sodium‐mediated epitaxial growth strategy to promote 2D planar growth of Sb 2 Se 3 crystals, as schematically illustrated in Figure 1b. Briefly, high purity argon (Ar) is used as the carrier gas, the powder mixture of Sb 2 Se 3 and NaCl is employed as the precursor, and the freshly cleaved fluorophlogopite mica ([KMg 3 (AlSi 3 O 10 )F 2 ]) is chosen as the growth substrate, which is placed above on the powder mixture with the freshly cleaved side facing down (see Experimental Section for the details).…”
As an important member of group VA–VIA semiconductors, 2D Sb2Se3 has drawn widespread attention thanks to its outstanding optoelectronic properties as compared to the bulk material. However, due to the intrinsic chain‐like crystal structure, the controllable synthesis of ultrathin 2D planar Sb2Se3 nanostructures still remains a huge challenge. Herein, for the first time, the crystal structure limitation is overcome and the successful structural evolution of 2D ultrathin Sb2Se3 flakes (as thin as 1.3 nm), by introducing a sodium‐mediated chemical vapor deposition (CVD) growth method, is realized. The formation of 2D planar geometry is mainly attributed to the preferential growth of (010) plane with the lowest formation energy. The thickness‐dependent band structure of 2D Sb2Se3 flakes shows a wide absorption band from UV to NIR region (300–1000 nm), suggesting its potential application in broadband photodetection. Strikingly, the Sb2Se3 flakes–based photodetector demonstrates excellent performance such as broadband response varying from UV to NIR region, high responsivity of 4320 mA W−1, fast response time (τrise ≈ 13.16 ms and τdecay ≈ 9.61 ms), and strong anisotropic ratio of 2.5@ 532 nm, implying promising potential application in optoelectronics.
“…Using lattice distortions, the balance between crystal field splitting and Hund's exchange can be manipulated to drive metal/insulator and ferromagnetic/antiferromagnetic (FM/AFM) transitions [1][2][3]. Lanthanum cobaltite (LCO, LaCoO 3 ) is an example of a material that becomes a ferromagnet under epitaxial strain [4][5][6][7][8][9]. Ferromagnetism in epitaxial LCO is particularly interesting, as the bulk material was thought to be nonmagnetic [10].…”
Magnetism in lanthanum cobaltite (LCO, LaCoO3) appears to be strongly dependent on strain, defects, and nanostructuring. LCO on strontium titanate (STO, SrTiO3) is a ferromagnet with an interesting strain relaxation mechanism that yields a lattice modulation. However, the driving force of the ferromagnetism is still controversial. Experiments debate between a vacancy-driven or straindriven mechanism for epitaxial LCO's ferromagnetism. We found that a weak lateral modulation of the superstructure is sufficient to promote ferromagnetism. Our research also showed that ferromagnetism appears under uniaxial compression and expansion. Although earlier experiments suggest that bulk LCO is nonmagnetic, our Diffusion Monte Carlo calculations found that magnetic phases have a lower energy ground state for bulk LCO. This article discusses recent experiments indicating a more complicated picture for the bulk magnetism and closer agreement with our calculations. The role of defects are also discussed through excited-state calculations. arXiv:1908.02811v3 [cond-mat.mtrl-sci]
“…Experimental growth of LCO films on STO(001) is usually carried out at around 650-750 • C and 1-320 mTorr oxygen pressure, as summarized in Table II. Fuchs et al, 22 Freeland et al, 21 and Qiao et al 24 exposed the samples to a 200-750 Torr oxygen atmosphere after deposition; nevertheless, they observed a similar Curie temperature as Mehta et al, 20,23 Choi et al, 17 Biškup et al, 19 and Feng et al 25 The relatively high temperatures employed during the growth process legitimate our thermodynamic approach, which is strictly valid only in equilibrium. 42,68 The phase diagram in Fig.…”
Section: Brownmillerite Lacoo25 On Sto(001)mentioning
confidence: 73%
“…This may offer an explanation why the 3×1 reconstruction of LCO films strained on STO(001) is sometimes not observed. 24,25 Both phases exhibit a low conductivity, in particular the semiconducting IS/IS/IS phase, but also the LS/IS/IS phase due to the insulating LS planes. Moreover, the coexistence of FM and insulating NM domains in LCO films may add to the resistivity of the samples.…”
Section: Brownmillerite Lacoo25 On Sto(001)mentioning
confidence: 99%
“…[17][18][19][20] These stripes were shown to be related to a short/short/long modulation of the La-La distances along the [100] direction. 19 Moreover, an insulating 21 and ferromagnetic (FM) ground state emerges, with a Curie temperature of T C ≈ 80 K. 17,[19][20][21][22][23][24][25] Two distinct models have been put forward to explain these observations. The first model is based on an ordered arrangement of oxygen vacancies in every third Co (100) plane, 19 formally LaCoO 2.…”
The origin of the 3 × 1 reconstruction observed in epitaxial LaCoO3 films on SrTiO3(001) is assessed by using first-principles calculations including a Coulomb repulsion term. We compile a phase diagram as a function of the oxygen pressure, which shows that (3 × 1)-ordered oxygen vacancies (LaCoO2.67) are favored under commonly used growth conditions, while stoichiometric films emerge under oxygen-rich conditions. Growth of further reduced LaCoO2.5 brownmillerite films is impeded by phase separation. We report two competing ground-state candidates for stoichiometric films: a semimetallic phase with 3 × 1 low-spin/intermediatespin/intermediate-spin magnetic order and a semiconducting phase with intermediate-spin magnetic order. This demonstrates that tensile strain induces ferromagnetism even in the absence of oxygen vacancies. Both phases exhibit an intriguing (3 × 1)-reconstructed octahedral rotation pattern and accordingly modulated La-La distances. In particular, charge and bond disproportionation and concomitant orbital order of the t2g hole emerge at the Co sites that are also observed for unstrained bulk LaCoO3 in the intermediate-spin state and explain structural data obtained by x-ray diffraction at elevated temperature. Site disproportionation drives a metalto-semiconductor transition that reconciles the intermediate-spin state with the experimentally observed low conductivity during spin-state crossover without Jahn-Teller distortions.arXiv:2003.02317v1 [cond-mat.mtrl-sci]
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