Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes

Rajasekharan, B.; Salm, Cora; Hueting, R.J.E.; Hoang, Tù; Schmitz, Jurriaan

doi:10.1109/ulis.2008.4527172

Cited by 15 publications

(17 citation statements)

References 6 publications

(6 reference statements)

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“…In this paper, a novel doping-less 1T-DRAM device, requiring a simplified fabrication process due to the absence of dopant implantation [2]- [3], [13]- [15], is presented through 2-dimensional simulations. For dynamic memory applications, the undoped region exhibits a higher carrier lifetime and reduced hole recombination which benefits to attain higher retention time [16], [17].…”

Section: Introductionmentioning

confidence: 99%

Raised Body Doping-Less 1T-DRAM With Source/Drain Schottky Contact

Lin

Sun

Lin

et al. 2019

IEEE J. Electron Devices Soc.

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In this paper, we propose a novel structure of doping-less 1T-DRAM with raised body and Schottky contact to source/drain regions which uses thermionic emission to generate electrons and holes. As the device is free from physical doping, the problems associated with random dopant fluctuations will be eliminated in the proposed doping-less topology. Our simulation results show that a programming window of 28.7 μA/μm at a gate length of 10 nm with the retention time of 466 ms at 27 • C and 79 ms at 85 • C can be achieved with the proposed doping-less 1T-DRAM, which is much better than a conventional charge-plasma based doping-less 1T DRAM.

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Section: Introductionmentioning

confidence: 99%

Raised Body Doping-Less 1T-DRAM With Source/Drain Schottky Contact

Lin

Sun

Lin

et al. 2019

IEEE J. Electron Devices Soc.

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“…In the devices presented in this letter, the metallic contacts are extended to the top of the thin silicon body in order to reduce the contact resistance. As stated earlier [10], [11], there are two essential features in this concept. First, the workfunctions of the cathode and the anode metals should fulfill ϕ m,C < χSi + (E G /2) and ϕ m,A > χSi + (E G /2) in terms of the electron affinity of bulk silicon (χSi = 4.17 eV), and the bandgap of bulk silicon (E G ).…”

mentioning

confidence: 96%

Fabrication and Characterization of the Charge-Plasma Diode

Rajasekharan

Hueting

Salm

et al. 2010

IEEE Electron Device Lett.

233

110

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We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/µm with ON/OFF current ratios of around 10 7 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.Index Terms-Buried oxide (BOX), charge-plasma (CP) diode, diode, p-i-n diode, Schottky barrier, silicon-on-insulator (SOI).

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“…Since a charge plasma p-n junction has already been experimentally demonstrated [9] and other low power [10 -25] and high power [26] …”

Section: Discussionmentioning

confidence: 99%

“…The "n + " source/drain regions and "p + " body contact are formed using the charge plasma concept by using metal electrodes of a specific work function [10,11]. The charge plasma concept is used to realize both low power devices [12][13][14][15][16][17][18][19][20][21][22][23][24][25] and a high power p-i-n diode [26]. We show in this work that LDMOS can also be implemented using the charge plasma principle and consequently reduce the number of thermal steps required during the fabrication.…”

Section: Introductionmentioning

confidence: 99%