Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor deposition

Kwak, Dong Wook; Cho, H.Y.; Yang, Wenyuan

doi:10.1016/j.physe.2006.07.017

Cited by 31 publications

(18 citation statements)

References 11 publications

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“…Catalyst assisted growth of nanowires through the vapor-liquid-solid mechanism (VLS) has given the possibility to control the size and position of nanowires [14][15][16][17]. In the VLS process, the silicon impinges on the substrate in the form of a precursor gas, in our case silane.…”

Section: Introductionmentioning

confidence: 99%

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Zardo

Conesa‐Boj

et al. 2009

Nanotechnology

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Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The crystalline growth direction has been found to vary between 111 and 112 , depending on both the growth temperature and catalyst thickness. Gallium has been found at the end of the nanowires, as expected from the vapor-liquid-solid growth mechanism. These results represent good progress towards finding alternative catalysts to gold for the synthesis of nanowires.

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Section: Introductionmentioning

confidence: 99%

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Zardo

Conesa‐Boj

et al. 2009

Nanotechnology

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“…Growth rate of SiNNs is estimated to be about 350 nm/min after 15 min of growth. This value is certainly higher than the conventional CVD (12 nm/min) [41] and RTCVD (80 nm/min) [13] assisted growth rates of SiNWs. High growth rate is primarily related to the usage of VHF plasma power that caused the absence of ion bombardment in the growth region and decomposed the SiH 4 precursor more efficiently.…”

Section: Resultsmentioning

confidence: 79%

Improved structural features of Au-catalyzed silicon nanoneedles

Mohammed

Sakrani

Rohani

2015

Superlattices and Microstructures

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“…The individual Si NW grown at 550°C under hydrogen ambient by RTCVD resulted in two unusual structures. The detailed growth procedures are described elsewhere [20]. The top part of the Si NW, which is the part with a regular interval from the growing Au tip, exhibited a cylindrical shape.…”

Section: Resultsmentioning

confidence: 99%

Observation of Au nanoparticles on the surface of silicon nanowire grown by rapid thermal chemical vapour deposition

Kwak

Lee

Cho

2015

Micro & Nano Letters

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The size evolution of gold (Au) nanoparticles (NPs) on the sidewall surface of silicon (Si) nanowires (NWs) has been investigated by thermal treatments, using high-angle annular dark field scanning transmission electron microscopy. The Si NWs grown at 550°C by rapid thermal chemical vapour deposition have been observed to be surrounded by Au NPs with less than 5 nm diameter and ∼10 12 cm −2 density on the whole Si NW surface. To explore the size change of Au NPs, the Au NPs on the Si NW were annealed ex situ at the temperature range of 700-900°C for 20 min. The sizes of NPs for samples annealed at 700, 800 and 900°C represent Gaussian distribution with the average size of 4, 6 and 7 nm, respectively, while at high temperatures above 900°C, they change to a bimodal distribution. It is suggested that the surface diffusion rate of Au NPs on Si NW is much lower than that on the Si substrate because of the substitutional diffusion mechanism.

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Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor deposition

Cited by 31 publications

References 11 publications

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Improved structural features of Au-catalyzed silicon nanoneedles

Observation of Au nanoparticles on the surface of silicon nanowire grown by rapid thermal chemical vapour deposition

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