Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors

Tseng, Frank; Unlcer, DIncer; Holcomb, Katherine; Stan, Mircea R.; Ghosh, Avik W.

doi:10.1063/1.3147187

Cited by 37 publications

(25 citation statements)

References 13 publications

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“…The Non-equilibrium Green's function (NEGF) formalism [7] provides a unified, 'bottom-up' platform for modeling quantum flow of electrons. Indeed, it has been successfully applied to understand transport physics in materials and systems as diverse as organic molecules [8], carbon nanotubes [9,10], graphene [11][12][13][14][15][16], silicon nanowires [17][18][19][20][21][22], spintronics, nanomagnets [23,24], nanoscale phonon transport [25][26][27]. A challenge however is the sheer problem size associated with atomistic deconstruction of experimentally relevant dimensions, typically hundreds of nanometers, as well as the scattering physics at the atomistically rough edges.…”

Section: Simulation Platformmentioning

confidence: 99%

Atomistic deconstruction of current flow in graphene based hetero-junctions

2013

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We describe the numerical modeling of current flow in graphene heterojunctions, within the Keldysh Landauer Non-equilibrium Green's function (NEGF) formalism. By implementing a k-space approach along the transverse modes, coupled with partial matrix inversion using the Recursive Green's function Algorithm (RGFA), we can simulate on an atomistic scale current flow across devices approaching experimental dimensions. We use the numerical platform to deconstruct current flow in graphene, compare with experimental results on conductance, conductivity and quantum Hall, and deconstruct the physics of electron 'optics' and pseudospintronics in graphene p − n junctions. We also demonstrate how to impose exact open boundary conditions along the edges to minimize spurious edge reflections.

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Section: Simulation Platformmentioning

confidence: 99%

Atomistic deconstruction of current flow in graphene based hetero-junctions

2013

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“…Thereby we focus on the interplay of disorder, boundaries effects and GNR geometry. Particular aspects of various kinds of disorder in GNRs have been investigated previously in the literature 15,16,17,18,19,20,21,22 .…”

Section: Introductionmentioning

confidence: 99%

Anderson disorder in graphene nanoribbons: A local distribution approach

2009

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Disorder effects strongly influence the transport properties of graphene based nanodevices even to the point of Anderson localization. Focusing on the local density of states and its distribution function, we analyze the localization properties of actual size graphene nanoribbons. In particular we determine the time evolution and localization length of the single particle wave function in dependence on the ribbon extension and edge geometry, as well as on the disorder type and strength.

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“…Multiple band gaps were observed in the same width of GNRs fabricated even in the first experiment performed on GNRs in 2007 14 . Later, several experimental papers also reported multiple band gap values corresponding to different passivation patterns at the edges in the same width of GNRs and other quasi-one dimensional materials such as silicon nanowires fabricated in a crystallographic orientation [15][16][17][18][19][20] . Since 2007, hundreds of theoretical papers have been published on GNRs focused only on how to explain non-zero band gap in both the crystallographic orientations of GNRs based on different edge passivating patterns with different type of edge passivating elements.…”

Section: Introductionmentioning

confidence: 99%

Origin of multiple band gap values in single width nanoribbons

Deepika

Kumar

Shukla

et al. 2016

Sci Rep

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Deterministic band gap in quasi-one-dimensional nanoribbons is prerequisite for their integrated functionalities in high performance molecular-electronics based devices. However, multiple band gaps commonly observed in graphene nanoribbons of the same width, fabricated in same slot of experiments, remain unresolved, and raise a critical concern over scalable production of pristine and/or hetero-structure nanoribbons with deterministic properties and functionalities for plethora of applications. Here, we show that a modification in the depth of potential wells in the periodic direction of a supercell on relative shifting of passivating atoms at the edges is the origin of multiple band gap values in nanoribbons of the same width in a crystallographic orientation, although they carry practically the same ground state energy. The results are similar when calculations are extended from planar graphene to buckled silicene nanoribbons. Thus, the findings facilitate tuning of the electronic properties of quasi-one-dimensional materials such as bio-molecular chains, organic and inorganic nanoribbons by performing edge engineering.

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Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors

Cited by 37 publications

References 13 publications

Atomistic deconstruction of current flow in graphene based hetero-junctions

Atomistic deconstruction of current flow in graphene based hetero-junctions

Anderson disorder in graphene nanoribbons: A local distribution approach

Origin of multiple band gap values in single width nanoribbons

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