1969
DOI: 10.1016/0011-2275(69)90194-5
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Dilatometer with a sensitivity of 10−4 angstrom

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1971
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Cited by 15 publications
(3 citation statements)
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“…Considering the possible features in which the high mobility Si-MOS structures differ from other systems, like GaAs/Al(Ga)As where the mobility edge was not found [15], we would like to note the following: (i) the Coulomb interaction energy E ee = e 2 /κr is higher in Si-MOS structures than in GaAs samples (at the same interelectron distance, r) by a factor of 1.7 due to the smaller dielectric constant κ = 7.7 at the Si/SiO 2 interface [1], (ii) the Si/SiO 2 interface is characterized by a very strong asymmetry of the confining potential in the z− direction. The latter results in a large effective Lorentzian field H * seen by electrons; the corresponding spin-orbit gap at zero field was found to be equal to ≈ 4K [12]. These effects associated with the broken reflection symmetry of the confining potential are much less pronounced in GaAs/Al(Ga)As heterojunctions and are apparently absent in the rectangular potential wells.…”
mentioning
confidence: 93%
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“…Considering the possible features in which the high mobility Si-MOS structures differ from other systems, like GaAs/Al(Ga)As where the mobility edge was not found [15], we would like to note the following: (i) the Coulomb interaction energy E ee = e 2 /κr is higher in Si-MOS structures than in GaAs samples (at the same interelectron distance, r) by a factor of 1.7 due to the smaller dielectric constant κ = 7.7 at the Si/SiO 2 interface [1], (ii) the Si/SiO 2 interface is characterized by a very strong asymmetry of the confining potential in the z− direction. The latter results in a large effective Lorentzian field H * seen by electrons; the corresponding spin-orbit gap at zero field was found to be equal to ≈ 4K [12]. These effects associated with the broken reflection symmetry of the confining potential are much less pronounced in GaAs/Al(Ga)As heterojunctions and are apparently absent in the rectangular potential wells.…”
mentioning
confidence: 93%
“…It has been noticed earlier [12] that the temperature dependence of the resistivity of the 2D metallic phase may be well described by an empirical law ρ(T ) = ρ 1 + ρ 2 exp(−T * /T ), where ρ 1 is related to scattering at T = 0, while the second term is associated with an energy gap, ∆ = kT * . Since the parallel field does not affect orbital electron motion, the magnetic field may couple to the 2D electrons only via their spins.…”
mentioning
confidence: 98%
“…Higher frequencies still were employed by PUDALOV and KHAIKIN [PuD69], who used a coaxial microwave resonator (9.5 GHz) as a dilatometric transducer. Employing an x-cut quartz crystal as a calibrating element,1O the detection sensitivity for unity signal/noise ratio was found to be 1 x 10-12 • (b) Light Waves.…”
Section: Resonance Methodsmentioning
confidence: 99%