Digital optical switch based on amorphous silicon waveguide

Sirleto, L.; Iodice, Mario; Corte, Francesco G. Della; Rendina, Ivo

doi:10.1016/j.optlaseng.2006.04.009

Cited by 11 publications

(3 citation statements)

References 17 publications

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“…It is worth noting that, in the past, the EO effects had been rarely considered for the design and realization of a-Si:H-based devices, however, the few reported experiments on extremely basic, waveguide integrated, active structures showed switching bandwidth limited to far less than 1 MHz [13,38,39].…”

Section: Introductionmentioning

confidence: 99%

Progress towards a high-performing a-Si:H-based electro-optic modulator

Rao

Coppola

Summonte

et al. 2014

J. Opt.

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Hydrogenated amorphous silicon (a-Si:H) has recently emerged as a promising material to provide microchips with passive and active photonic functions through a back-end and CMOS-compatible technological process. In this paper, we discuss the performance achieved with different configurations of a-Si:H-based electro-optical amplitude modulators integrated into passive waveguides. All of the analysed devices are based on the plasma dispersion effect, a phenomenon that allows us to reach useful performance at the communication wavelength of λ ∼ 1.55 μm. The behaviour of the various proposed modulation approaches has been tested by ad hoc interferometric structures, such as Fabry–Perot integrated resonators or integrated Mach–Zehnder interferometer, as well as by multistack devices to enhance the static modulation efficiency. The performance of each modulator has been analysed through several figures of merit.

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Section: Introductionmentioning

confidence: 99%

Progress towards a high-performing a-Si:H-based electro-optic modulator

Rao

Coppola

Summonte

et al. 2014

J. Opt.

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“…Hydrogenated amorphous silicon (α-Si:H) films are widely used in photovoltaic and optoelectronic devices such as solar cells [1] , thin film transistors [2] , optical switches [3] , optical waveguides [4] and optical filters [5] . For applications in optical filters, α-Si:H film with a smooth surface morphology for reducing diffuse scattering and power loss on the optical interface was requested.…”

Section: Introductionmentioning

confidence: 99%

Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition

Feng

Zhang

et al. 2009

Plasma Sci. Technol.

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Influence of the parameters of plasma enhanced chemical vapor deposition (PECVD) on the surface morphology of hydrogenated amorphous silicon (α-Si:H) film was investigated. The root-mean-square (RMS) roughness of the film was measured by atomic force microscope (AFM) and the relevant results were analyzed using the surface smoothing mechanism of film deposition. It is shown that an α-Si:H film with smooth surface morphology can be obtained by increasing the PH3/N2 gas flow rate for 10% in a high frequency (HF) mode. For high power, however, the surface morphology of the film will deteriorate when the SiH4 gas flow rate increases. Furthermore, optimized parameters of PECVD for growing the film with smooth surface were obtained to be SiH4: 25 sccm (standard cubic centimeters per minute), Ar: 275 sccm, 10%PH3/N2: 2 sccm, HF power: 15 W, pressure: 0.9 Torr and temperature: 350 o C. In addition, for in thick film deposition on silicon substrate, a N2O and NH3 preprocessing method is proposed to suppress the formation of gas bubbles.

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“…Among various semiconductor switches, a digital optical switch (DOS) based on adiabatic mode evolution has experienced maximum attention due to its unique characteristics of low polarization and low wavelength sensitivity. A conventional Y-shaped waveguiding structure had been preferred to realize a DOS with polymers [1], amorphous Si [2][3], Ti-indiffused LiNbO 3 [4][5][6][7] because of its easy and compact design, though it usually suffers from a high driving voltage and crosstalk (CT) levels. The improvements in CT had been proposed by modifying this structure, such as using double-etch waveguides [8], asymmetric X-junction [9], cascaded DOS [1] and a two-stage dilated switch [10].…”

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confidence: 99%

High performance Digital Optical Switch

Singh

Gupta²,

Jain³

et al. 2011

Photon. Lett. Poland

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Abstract-In this work, we present a high performance Y-shaped digital optical switch (DOS) which complies with the DOS reported earlier using Titanium in-diffused or proton exchanged Lithium Niobate waveguiding structures. The optimization of switching characteristics is performed for switching voltage and device size. This structure has a total length of 5.5mm and a width of 20.6µm. For the first time, the driving voltage as low as 1V has been achieved with acceptable crosstalk levels (in the range of -22dB to -28dB) for communication applications. Using a beam propagation method (BPM), we demonstrate that the switch is polarization independent and suitable for low attenuation optical window (1300nm and 1550nm) operation as well.In the modern age of communication, switches are one of the most important devices in optical networks. Among various semiconductor switches, a digital optical switch (DOS) based on adiabatic mode evolution has experienced maximum attention due to its unique characteristics of low polarization and low wavelength sensitivity. A conventional Y-shaped waveguiding structure had been preferred to realize a DOS with polymers However, the crosstalk suppression using these approaches had been achieved at the expense of higher driving voltages, while device operation with low power requirements is one of the key issues in modern communication networks. Therefore emphasis shall be given on the development of a DOS with low CT levels and switch losses for low power (voltage) requirements. Proper electrode positioning shall lead to electro-optic switches with reduced losses and driving power requirements as well [7], [11]. In this work, we propose a Y-shaped digital optical switch based on conventional structure with the lowest switching voltage (1V) and CT as low as in the range of -22dB to -28dB. The device design and analysis have been done with the Beamprop software and beam propagation method (BPM), * E-mail: gschoudhary75@gmail.com respectively. We have concentrated on a Ti-indiffused or proton exchanged LiNbO 3 electro-optic DOS utilizing optimized and properly shaped (slanted) electrode regions in accordance to output waveguides to achieve better switching performance with lower voltage requirements than previously reported. Figure 1 depicts the layout of the proposed DOS based on a conventional Y-shaped waveguiding structure. In our case, the channel waveguide width (C w ) is 4µm and the entire structure has a length of 5.5mm with a total device width of 20.6µm. The length of the output arms (slanted waveguides, L arm ) is 3.5mm, with a separation of 10µm between the end facets of its output ports. The optimum length of electrodes (L e ) is found to be 3/4 th of the switch arms i.e. 2.62 mm. Here we considered slanted shaped electrode regions in accordance with outer arms rather than choosing linear electrodes as previously used [11]. Extensive iterations were performed to found the best value for a branch angle, with which the device operates as an efficient splitter under no bias conditi...

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Digital optical switch based on amorphous silicon waveguide

Cited by 11 publications

References 17 publications

Progress towards a high-performing a-Si:H-based electro-optic modulator

Progress towards a high-performing a-Si:H-based electro-optic modulator

Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition

High performance Digital Optical Switch

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