Proceedings of the 8th IEEE International NEWCAS Conference 2010 2010
DOI: 10.1109/newcas.2010.5603722
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Digital linearity correction of a wide dynamic range current-mode image sensor

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Cited by 2 publications
(2 citation statements)
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“…The non-linearity comes mainly from the hole mobility degradation of transistor M 2 as a function of V GS and the ''on'' resistance of the select transistor M 3 . A solution for the non-linearity imposed by the transistor M 3 'on' resistance which results in an increasing drain-source voltage drop as the output current increases, has been proposed in [15] using a digital correction method. The image lag effect shown in Figure 3, due to the dependence of the reset photosite voltage on the light intensity, affects the image quality.…”
Section: System Architecture and Operationmentioning
confidence: 99%
See 1 more Smart Citation
“…The non-linearity comes mainly from the hole mobility degradation of transistor M 2 as a function of V GS and the ''on'' resistance of the select transistor M 3 . A solution for the non-linearity imposed by the transistor M 3 'on' resistance which results in an increasing drain-source voltage drop as the output current increases, has been proposed in [15] using a digital correction method. The image lag effect shown in Figure 3, due to the dependence of the reset photosite voltage on the light intensity, affects the image quality.…”
Section: System Architecture and Operationmentioning
confidence: 99%
“…Part of this work has been reported in the IEEE NEWCAS conference proceedings [15][16], new key experimental results are presented to complete this work. This paper is organized as follow.…”
Section: Introductionmentioning
confidence: 99%