Diffusive mass transfer in island films

Geguzin, Ya. E.; Kaganovskii, Yu.

doi:10.1070/pu1978v021n07abeh005667

Cited by 24 publications

(13 citation statements)

References 52 publications

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“…The island will run in front of the step until it collides with obstacles (other islands). This process is described in ref and is called the “sweeping by steps” regime. Note also that if an island moving away from the step in this regime approaches another island on the terrace, it will begin to repel that island, too, because the space between the islands will be depleted of adatoms.…”

Section: Interaction Of Islands and Stepsmentioning

confidence: 99%

“…As far as we know, there is no general theory that would allow one to determine the criterion for the formation of islands of individual components on the terraces of a growing N-component crystal in the case when: (1) the critical radius is different from unity (i.e., at low supersaturations), (2) the evaporation of adatoms from the terraces into the gas phase is possible, and (3) there are moving multicomponent steps on the terrace. Several papers have made a detailed study of the nucleation and evolution (growth, dissolution, coagulation) of islands on a heterogeneous stepped surface, − including nucleation of Ga islands on the GaN surface and Te-rich clusters on Be 2 Ti 3 . However, they do not focus on the influence of the moving multicomponent steps on the nucleation of islands.…”

Section: Introductionmentioning

confidence: 99%

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Dynamic Interaction of Steps and Nanoislands during Growth of a Multicomponent Crystal

Redkov

Кукушкин

2021

Crystal Growth & Design

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Processes of formation of islands of individual components on terraces during step-flow growth of a multicomponent crystal are considered. This phenomenon is observed repeatedly in experiments and is possible when an excess of one of the components accumulates on the surface. In this case, multicomponent steps can be used as an additional tool to control the ensemble of islands on the crystal surface because, unlike single-component systems, it is possible to independently control the motion of the steps and the kinetics of the growth of one-component islands. Analytical criteria are obtained for identifying the conditions under which the nucleation of islands of individual components is possible. The interaction of an individual island and a step on the surface of a multicomponent crystal is investigated. A mechanism of dynamically stable forming quasiperiodic layers of islands is discussed. Under certain conditions, the observed phenomena can be used for the bottom-up formation of various quasi-ordered nanostructures both on the surface and in the bulk of the growing crystal.

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Section: Interaction Of Islands and Stepsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dynamic Interaction of Steps and Nanoislands during Growth of a Multicomponent Crystal

Redkov

Кукушкин

2021

Crystal Growth & Design

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“…Например, в наноструктурированных поликристаллах наблюдается эффект укрупнения зерен [4], а в ансамблях наночастиц -эффекты коалесценции и спекания [5,6]. Эти процессы имеют место и в ансамблях островных пленок на твердых поверхностях [7]. Согласно [7,8], даже в процессе стандартного термовакуумного напыления сплошной тонкой пленки первоначально на подложке формируются островки, которые затем уже сливаются в сплошную пленку.…”

unclassified

“…Эти процессы имеют место и в ансамблях островных пленок на твердых поверхностях [7]. Согласно [7,8], даже в процессе стандартного термовакуумного напыления сплошной тонкой пленки первоначально на подложке формируются островки, которые затем уже сливаются в сплошную пленку.…”

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To the Problem of Stability of Nanoscale Island Films and Extended Films With Nanosized Thickness

Samsonov¹,

Talyzin²

2020

Physical and Chemical Aspects of the Study of Clusters, Nanostructures and Nanomaterials

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Геометрическая нестабильность наноразмерных островковых пленок интерпретируется как проявление явления смачивания в твердом состоянии, а нестабильность сплошных пленок, наноразмерных по толщине, - как следствие десмачивания в твердом состоянии. С использованием молекулярно-динамического эксперимента исследованы закономерности и механизмы растекания твердых наночастиц Pb по различным граням Си при температуре, на 10 К ниже температуры плавления наночастиц выбранного размера (10 нм). Полученные в молекулярнодинамических экспериментах результаты сравниваются с экспериментальными данными, относящимися к микрочастицам Pb размером 5 -10 мкм. Установлено, что в одной и той же системе «островок-подложка» могут одновременно наблюдаться оба явления: смачивания в твердом состоянии и десмачивания в твердом состоянии. The geometric instability of nanoscale island films is interpreted as a manifestation of the solid state wetting phenomenon, and instability of continuous extended films with nanosized thickness as a consequence of the solid state dewetting. Using molecular dynamics experiment, regularities and mechanisms are investigated of spreading of Pb solid nanoparticles on different Cu faces at a temperature 10 K below the melting temperature of nanoparticles of the chosen size (10 nm). The results obtained in molecular dynamics experiments are compared with experimental data for Pb microparticles of 5 -10 pm in size. It has been also established that in the same «island -substrate» system both solid state wetting and solid state dewetting phenomena can simultaneously take place.

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“…Therefore, by analyzing the movement of secondary phases in the bulk semiconductor (Figure 1), we take into account the fact that movement is performed not only by means of electric transport but also under the influence of thermoelectric phenomena (the Peltier effect) at the interface between the liquid inclusion and solid phase [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

The Formation and Migration of Molten Inclusions in Silicon

Скворцов¹

2017

New Research on Silicon - Structure, Properties, Technology

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The mechanisms of formation and migration of molten inclusions in silicon are described. Consideration of them is necessary for development of technological approaches to formation of conducting regions (characteristic sizes of 10 μm-30 nm) and doped conducting channels in silicon. The problem of formation of local conducting regions is topical, e.g., for single electronics. It is known that sizes of a "Coulomb island" (about 10 nm) present difficulties to modern technologies. That is why the development of alternative procedures to form a "Coulomb island" (in particular, those based on electromigration of molten regions in semiconductor bulk) is a topical problem. Besides, high heat loads on the "classical" silicon structures, owing to specific character of their work ( operating current densities may be as high as j ~ 10 9 -10 10 A/m 2 ), promote their active degradation. The appearing molten regions coagulate into drops and are displaced by a current along the electric field lines. Therefore, a detailed analysis of the mechanisms of inclusions formation and migration in silicon will make it possible to predict more accurately the "critical" modes of silicon structures operation (e.g., in power electronics). The main mechanisms of molten inclusions formation (contact melting in a metal-semiconductor system, decomposition of supersaturated solid solutions in heavily doped semiconductors) are considered, as well as the procedures to form and control mobility of such objects: electric current, temperature gradient, structural inhomogeneities, etc. The problems of molten inclusions migration in silicon single crystals occurring in electric field with contact melting electric transport of melt components and thermoelectric effects at interphase boundaries are considered in detail. The molten region is moving along the electric field lines, thus enabling to exert control over the trajectory of its motion. The results of author's original investigations on formation and migration of molten silver-and aluminum-based inclusions in silicon are presented, as well as the experimental data by other authors. The main migration mechanisms related to melting-crystallization processes at © 2017 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.interphase boundaries and components diffusion through the melt region are discussed in detail. The problems to defect formation in silicon after crystallization of inclusions are also considered.Keywords: silicon single crystals, contact melting, crystallization, melt inclusion, formation of molten regions in a metal-semiconductor system, electromigration of inclusions by the melting-crystallization mechanism, diffusion in the melt, gradients of concentration and temperature, formation of structural defects in silicon single crystals with inclu...

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Diffusive mass transfer in island films

Cited by 24 publications

References 52 publications

Dynamic Interaction of Steps and Nanoislands during Growth of a Multicomponent Crystal

Dynamic Interaction of Steps and Nanoislands during Growth of a Multicomponent Crystal

To the Problem of Stability of Nanoscale Island Films and Extended Films With Nanosized Thickness

The Formation and Migration of Molten Inclusions in Silicon

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