Diffusion reactions at Al–MgAl2O4 interfaces—and the effect of applied electric fields

Effects of substrate orientation on aluminum grown on MgAl2O4 spinel using molecular beam epitaxy

“…4(a), in which the /0 0 1S direction of Al is parallel to that of the MgAl 2 O 4 substrate. This result further confirms the cube-on-cube orientation relationship between epitaxial Al and the spinel substrate [15]. In contrast, defect structures can be observed in cross-sectional TEM images of Al thin films grown on (1 1 1) MgAl 2 O 4 substrates, shown in Fig.…”

Ionic interdiffusion as interaction mechanism between Al and Si3N4

“…On such interaction, the replacement of 2 moles of Si with 2 moles of Al and the formation of 1 mole of O vacancy transform the aluminosilicates to aluminates. A parallel study using the system Al‐MgAl 2 O 4 showed that Al 3+ ↔ Mg 2+ interdiffusion is the interaction mechanism, confirmed by the use of an electric field to control the interaction, where the direction of the electric field controlled the reaction kinetics . Furthermore, the same study revealed that metastable γ‐Al 2 O 3 forms at the Al‐MgAl 2 O 4 interface.…”

Interaction of nanostructured metal overlayers with oxide surfaces

“…Raj et al have also shown that an ion exchange reaction between Al and spinel ceramic of (MgO)·(1.25Al 2 O 3 ) produces interdiffusion zones at the interface [105,106].…”