Diffusion phenomena in atomic layer deposition

Knez, Mato

doi:10.1088/0268-1242/27/7/074001

Cited by 24 publications

(22 citation statements)

References 51 publications

(68 reference statements)

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“…A more likely explanation is the intermixing of Al and Zn atoms that can occur easily via surface reactions during ALD growth. 31 For example, an etching effect has been observed when TMA reacts with a ZnO surface, 14 , 32 , 33 i.e., TMA can remove surface Zn atoms, and consequently, Al atoms can occupy the newly vacant surface sites. This etching effect might introduce downward spreading of Al atoms, accounting for the asymmetry of the profile mentioned above.…”

Section: Resultsmentioning

confidence: 99%

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

Giddings

Verheijen

et al. 2018

Chem. Mater.

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The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called “ALD supercycles” is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width–half-maximum of ∼2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > ∼1 nm–3 can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors.

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Section: Resultsmentioning

confidence: 99%

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

Giddings

Verheijen

et al. 2018

Chem. Mater.

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“…In the early process, the deposition occurs on the near surface region. On the other hand, the coordination between precursor and polar groups can disrupt hydrogen bonding, which leads to the opening of chain framework which eventually able to promotes the nucleation diffusion into the near surface region (Spagnola et al, 2010;Knez, 2012). These phenomena of the ALD growth mechanisms can be clearly illustrated as shown in Fig.…”

Section: Interfacial Diffusion Growthmentioning

confidence: 97%

The Growth Mechanisms of Atomic Layer Deposition: An Overview

Riyanto

Martides

Junianto

et al. 2020

Eksergi

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In this review, the discussion emphasized on the growth mechanisms of atomic layer deposition which consists of a theoretical model and experimentally growth as well as the measurement testing as evidences. The deposition process description with some testing evidences can be used to facilitate in the effort to understand the basic concept of ALD growth mechanisms. Some metal oxides like Al2O3, HfO2, and TiO2 with these employed precursors are typically used for the detailed illustration during the reaction steps. Although the surface chemistry of ALD process has been well understood, systematic description which combine a theoretical and experimentally growth mechanism is still missing. This paper aims to provide a better understanding of ALD growth mechanisms and surface chemistry which eventually able to contribute on the thin film growth processing.

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“…Meanwhile, precursor diffusion into the substrate is determined by the porosity, pore size, and thickness of the substrate. [ 66 ] Following the relatively slow nucleation of Al 2 O 3 islands during the initial 150–200 cycles, there observed a steady growth of coating thickness over ALD cycles, which yielded a clear hydrophilic/hydrophobic interface in the interior of PP film. [ 28,35 ]…”

Section: Ald Coating For Energy Storage and Membranesmentioning

confidence: 99%

Atomic Layer Deposition for Polypropylene Film Engineering—A Review

Song

2020

Macro Materials & Eng

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Polypropylene (PP) polymers are used extensively as dielectric layers, packaging films, and separation membranes, etc. Structure, chemistry, and surface features of PP films dominate their performance and durability. Modification of PP films is carried out using atomic layer deposition (ALD) among other techniques to coat uniform layer of nanometer inorganic material on the surface and inside the pores of PP films to serve the purpose of target applications better. Controlling the reaction temperature, precursor pulsing time, and number of cycles during deposition predominate the thickness, morphology, and composition of the coated layer and hence the performance of PP films. Overall, the ALD technique has been proven to be advantageous in advancing PP film properties such as hydrophilicity, UV resistance, membrane separators, dielectric and mechanical strength, etc., primarily through the controllable formation of nanometer coating on PP films. This review discusses the recent advancements and prospective of ALD in the modification and functionalization of PP films for various applications to provide some insights and motivations to design high‐performance novel PP films by well leveraging the ALD technique.

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Diffusion phenomena in atomic layer deposition

Cited by 24 publications

References 51 publications

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

The Growth Mechanisms of Atomic Layer Deposition: An Overview

Atomic Layer Deposition for Polypropylene Film Engineering—A Review

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