1972
DOI: 10.1002/pssa.2210140218
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Diffusion of Si in FeSi containing 8 to 11 at% Si

Abstract: By means of an electron microprobe the diffusion of silicon in iron–silicon was measured in the temperature range from 900 to 1100°C, using diffusion couples containing 7.64 and 11.1 at% Si. The diffusion coefficients turned out to be concentration dependent. Activation energies and frequency factors deduced are given.

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Cited by 41 publications
(11 citation statements)
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“…[40] Table III. Composition Ranges of the Selected Experimental Measurements [43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62] with experimental datapoints of Gro¨bner, [43] Vignes, [44] Bergner and Khaddour, [46] and Fridberg et al [56] The type of experimental diffusion coefficient is defined as i impurity diffusion, c chemical diffusion, and e estimated diffusion.…”
Section: Fig 6-calculatedmentioning
confidence: 99%
“…[40] Table III. Composition Ranges of the Selected Experimental Measurements [43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62] with experimental datapoints of Gro¨bner, [43] Vignes, [44] Bergner and Khaddour, [46] and Fridberg et al [56] The type of experimental diffusion coefficient is defined as i impurity diffusion, c chemical diffusion, and e estimated diffusion.…”
Section: Fig 6-calculatedmentioning
confidence: 99%
“…The phenomenon is known as room temperature short-range ordering, named after the temperature at which it was observed. The silicon interdiffusion depends of the relative compositions and the self-diffusion coefficients, according to Darken's equation as studied in [81] . Other measurements of diffusion, based on electron microprobe, show the influence of ordering in diffusion: according to Heikinheinmo [82] , the interdiffusion increases with Si-content in the disordered region, decreases slightly in the double-phase region of the phase diagram and increases again in the ordered (a 1 ) region.…”
Section: Room Temperature Ageingmentioning
confidence: 99%
“…Other measurements of diffusion, based on electron microprobe, show the influence of ordering in diffusion: according to Heikinheinmo [82] , the interdiffusion increases with Si-content in the disordered region, decreases slightly in the double-phase region of the phase diagram and increases again in the ordered (a 1 ) region. The diffusion cannot be studied at low temperatures due to lack of a suitable silicon radioisotope [81] , but the interdiffusion is estimated by extrapolation to have a value of 2.5×10 -23 [m 2 /s] at room temperature, from the values obtained by Rabkin et al [83] . This corresponds to roughly 1 jump/h on average.…”
Section: Room Temperature Ageingmentioning
confidence: 99%
“…The thinner layer by Oki and Tanikawa might be due to the slower Fe diffusion through FeSi. [19] D . [17] 6.…”
Section: Ks 36 Ksmentioning
confidence: 99%